# US 6,297,557 B1 · Reliable aluminum interconnect via structures

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- Number: US 6,297,557 B1
- Document ID: US6297557B1
- Status: Granted
- Kind: B1
- Application number: 09/134,070
- Filed: 1998-08-13
- Granted: 2001-10-02
- Earliest claimed: 1997-07-25
- Assignees: Philips Electronics North America Corporation
- Inventors: Subhas Bothra
- Web page: https://patentgrep.com/patent/US6297557B1

## CPC

- H10W 20/045: {for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD]}
- H10W 20/031: {of conductive parts of the interconnections}
- H10W 20/033: {in openings in dielectrics}
- H10W 20/037: {the barrier, adhesion or liner layers being on top of a main fill metal}
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- H10W 20/42: Vias, e.g. via plugs
- H10W 20/425: {Barrier, adhesion or liner layers}
- Y10S 438/927: Electromigration resistant metallization
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

Disclosed is an aluminum filled via hole for use in a semiconductor interconnect structure. The aluminum filled via hole of the semiconductor interconnect structure includes a first patterned metallization layer lying over a first dielectric layer. A second dielectric layer overlying the first patterned metallization layer and the first dielectric layer. An aluminum filled via hole defined through the second dielectric layer and in contact with the first patterned metallization layer. The aluminum filled via hole has an electromigration barrier cap over a topmost portion of the aluminum filled via hole that is substantially level with the second dielectric layer. The electromigration barrier cap having a thickness of between about 500 angstroms and about 2,500 angstroms.

## Claims

### Claim 1

An aluminum filled via hole for use in a semiconductor interconnect structure, comprising:
a first patterned metallization layer lying over a first dielectric layer, the first dielectric layer being a low K dielectrics having a K value of between about 2 and 4 and a thickness of between about 4,000 angstroms and about 13,000 angstroms;
a second dielectric layer overlying the first patterned metallization layer and the first dielectric layer, the second dielectric layer being a low K dielectrics having a K value of between about 2 and 4 and a thickness of between about 4,000 angstroms and about 13,000 angstroms;
an aluminum filled via hole defined through the second dielectric layer and in contact with the first patterned metallization layer, the aluminum filled via hole having an electromigration barrier cap that is tungsten containing over a topmost portion of the aluminum filled via hole that is substantially level with the second dielectric layer, the electromigration barrier cap having a thickness of between about 500 angstroms and about 2,500 angstroms; and
a seed layer lining an inner surface of the aluminum filled via hole, the seed layer being a Ti/TiN layer having a thickness of between about 100 angstroms and about 1,000 angstroms.

### Claim 2

An aluminum filled via hole for use in a semiconductor interconnect structure, comprising:
a first patterned metallization layer lying over a first dielectric layer;
a second dielectric layer overlying the first patterned metallization layer and the first dielectric layer;
an aluminum filled via hole defined through the second dielectric layer and in contact with the first patterned metallization layer, the aluminum filled via hole having an electromigration barrier cap that is tungsten containing over a topmost portion of the aluminum filled via hole that is substantially level with the second dielectric layer, the electromigration barrier cap having a thickness of between about 500 angstroms and about 2,500 angstroms; and
a seed layer lining an inner surface of the aluminum filled via bole, the seed layer being a Ti/TiN layer having a thickness of between about 100 angstroms and about 1,000 angstroms.

### Claim 3

An aluminum filled via hole of a semiconductor interconnect structure, comprising:
a first patterned metallization layer lying over a first dielectric layer;
a second dielectric layer overlying the first patterned metallization layer and the first dielectric layer;
an aluminum filled via hole defined through the second dielectric layer and in contact with the first patterned metallization layer, the aluminum filled via hole having an electromigration barrier cap over a topmost portion of the aluminum filled via hole that is substantially level with the second dielectric layer, the electromigration barrier cap having a thickness of between about 500 angstroms and about 2,500 angstroms; and
a seed layer lining an inner surface of the aluminum filled via hole, the seed layer being a TitTiN layer having a thickness of between about 100 angstroms and about 1,000 angstroms;
wherein the electromigration barrier cap is a material selected from the group consisting of titanium tungsten (TiW), tungsten (W), and tungsten silicide (WSi2).

### Claim 4

An aluminum filled via hole of a semiconductor interconnect structure, comprising:
a first patterned metallization layer lying over a first dielectric layer;
a second dielectric layer overlying the first patterned metallization layer and the first dielectric layer;
an aluminum filled via hole defined through the second dielectric layer and in contact with the first patterned metallization layer, the aluminum filled via hole having an electromigration barrier cap over a topmost portion of the aluminum filled via hole that is substantially level with the second dielectric layer, the electromigration barrier cap having a thickness of between about 500 angstroms and about 2,500 angstroms; and
a seed layer lining an inner surface of the aluminum filled via hole, the seed layer being a Ti/TiN layer having a thickness of between about 100 angstroms and about 1,000 angstroms;
wherein the first patterned metallization layer includes a bottom Ti/TiN barrier layer, an AlCu center layer and a TiN barrier/ARC layer.