# US 6,297,171 B1 · Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride

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- Number: US 6,297,171 B1
- Document ID: US6297171B1
- Status: Granted
- Kind: B1
- Application number: 09/295,642
- Filed: 1999-04-20
- Granted: 2001-10-02
- Earliest claimed: 1995-12-04
- Assignees: Micron Technology, Inc.
- Inventors: J. Brett Rolfson; Annette L. Martin; Ardavan Niroomand
- Web page: https://patentgrep.com/patent/US6297171B1

## CPC

- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)}
- H10P 14/6506: {Formation of intermediate materials}
- H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane}
- Y10S 438/948: Radiation resist
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A semiconductor processing method of promoting adhesion of photoresist to an outer substrate layer predominately comprising silicon nitride includes, a) providing a substrate; b) providing an outer layer of Si3N4 outwardly of the substrate, the outer Si3N4 layer having an outer surface; c) covering the outer Si3N4 surface with a discrete photoresist adhesion layer; and d) depositing a layer of photoresist over the outer Si3N4 surface having the intermediate discrete adhesion layer thereover, the photoresist adhering to the Si3N4 layer with a greater degree of adhesion than would otherwise occur if the intermediate discrete adhesion layer were not present. Further, a method in accordance with the invention includes, i) providing an outer layer of Si3N4 outwardly of the substrate, the outer Si3N4 layer having an outer surface; ii) transforming the outer Si3N4 surface into a material effective to promote adhesion of photoresist to the Si3N4 layer; and iii) depositing a layer of photoresist over the transformed outer Si3N4 surface, the photoresist adhering to the Si3N4 layer with a greater degree of adhesion than would otherwise occur if the outer Si3N4 surface were not transformed.

## Claims

### Claim 1

A semiconductor processing method comprising:
providing a substrate;
forming a layer over the substrate; the layer comprising a lower portion and an upper portion over and against the lower portion; the lower portion comprising a first concentration of silicon and a second concentration of nitrogen, the ratio of the second concentration to the first concentration being a first ratio; the upper portion comprising a third concentration of silicon and a fourth concentration of nitrogen, the ratio of the fourth concentration to the third concentration being a second ratio; the second ratio being less than the first ratio; and
forming a layer of photoresist in physical contact with the upper portion.

### Claim 2 (depends on 1)

The method of claim 1 wherein the second ratio is greater than 0.

### Claim 3

A semiconductor processing method comprising:
providing a substrate;
forming a first layer of silicon nitride over the substrate, the layer of silicon nitride having a first outer surface;
forming a second layer of silicon nitride over and in contact with the first outer surface, the second layer forming a second outer surface enriched with respect to the first outer surface in silicon; and
after forming the enriched second outer surface, forming a layer of photoresist in physical contact with the second outer surface.

### Claim 4

A semiconductor processing method comprising:
providing a monocrystalline silicon substrate;
placing the substrate within a chemical vapor deposition reactor;
feeding a gaseous silicon containing precursor and a gaseous nitrogen containing precursor to the reactor under conditions effective to deposit a first Si3N4 layer on the substrate;
reducing the gas flow of the nitrogen containing precursor to the reactor to form a second Si3N4 layer over the first Si3N4 layer, the second Si3N4 layer having an outermost surface of the deposited Si3N4 layer enriched with silicon atoms as compared to the first Si3N4 layer; and
depositing a layer of photoresist in physical Contact with the silicon enriched outer Si3N4 surface.

### Claim 5 (depends on 4)

The semiconductor processing method of claim 4 wherein the silicon containing precursor comprises dichlorosilane and the nitrogen containing precursor comprises ammonia.

### Claim 6 (depends on 4)

The semiconductor processing method of claim 4, wherein forming the first Si3N4 layer and forming the second Si3N4 layer are performed in a single continuous process.

### Claim 7 (depends on 3)

The semiconductor processing method of claim 3, wherein forming the first layer and forming the second layer are performed in a single continuous process.