# US 6,297,133 B1 · Method of fabricating well

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- Number: US 6,297,133 B1
- Document ID: US6297133B1
- Status: Granted
- Kind: B1
- Application number: 09/123,737
- Filed: 1998-07-28
- Granted: 2001-10-02
- Earliest claimed: 1998-05-25
- Assignees: United Microelectronics Corp.
- Inventors: Jacob Chen; Tz-Guei Jung
- Web page: https://patentgrep.com/patent/US6297133B1

## CPC

- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/0156: {Manufacturing their doped wells}
- H10B 12/01: {Manufacture or treatment}
- H10B 12/09: {with simultaneous manufacture of the peripheral circuit region and memory cells}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A method of manufacturing wells comprises the step of providing a p-type substrate and then sequentially forming a p-well and n-well with low dosage in the p-type substrate. Thereafter, energy is used to dope n-type ions into the p-well. The triple well formed in the present invention has low dosage ions, hence the DRAM formed on the triple well in subsequent process can have a faster refresh time.

## Claims

### Claim 1

A method of fabricating wells, comprising:
providing a substrate having a first conductivity type;
forming a first well having a second conductivity type in part of the substrate;
forming a second well having the first conductivity type in another part of the substrate; and
forming a third well having the second conductivity type in the bottom of the second well, wherein the second well is a triple well.

### Claim 2 (depends on 1)

The method of claim 1, wherein the first conductivity type is p-type.

### Claim 3 (depends on 1)

The method of claim 1, wherein the second conductivity type is n-type.

### Claim 4 (depends on 1)

The method of claim 1, wherein the step of forming the first well having the second conductivity type further includes implanting ions having the second conductivity type with a first implantation dosage into part of the substrate.

### Claim 5 (depends on 1)

The method of claim 1, wherein the step of forming the second well having the first conductivity type further includes implanting ions of the first conductivity type with the first implantation dosage into part of the substrate.

### Claim 6 (depends on 1)

The method of claim 1, wherein the step of forming the third well having the second type further includes using an implantation energy to implant second type ions into the part of the substrate.

### Claim 7 (depends on 4)

The method of claim 4, wherein the first implantation dosage is about 1E17/cm3.

### Claim 8 (depends on 6)

The method of claim 6, wherein the implantation energy is between 1 MeV and 3 MeV and an ion implantation dosage is about 3E17/cm3.

### Claim 9

A method of fabricating wells, comprising:
providing a substrate having a first conductivity type implanted with a first ion implantation dosage;
forming a first well having a second conductivity type implanted with a second ion implantation dosage in part of the substrate;
forming a second well having the first conductivity type implanted with the second ion implantation dosage in another part of the substrate; and
forming a third well having the second conductivity type implanted with a third ion implantation dosage in the bottom of the second well, wherein the second well is a triple well.

### Claim 10 (depends on 9)

The method of claim 9, wherein the first conductivity type is p-type.

### Claim 11 (depends on 9)

The method of claim 9, wherein the second conductivity type is n-type.

### Claim 12 (depends on 9)

The method of claim 9, wherein the third ion implantation dosage is lower than the second ion implantation dosage.

### Claim 13 (depends on 1)

The method of claim 1, wherein three surfaces of the triple well are surrounded by other wells and a fourth surface of the triple well is exposed.

### Claim 14 (depends on 9)

The method of claim 9, wherein, three surfaces of the triple well are surrounded by other wells and a fourth surface of the triple well is exposed.