In-situ nano-interconnected circuit devices and method for making the same
AssigneeAgere Systems Guardian Corp.
InventorsWalter L. Brown, Sungho Jin, Wei Zhu
Life of this patent
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Abstract
A circuit device is disclosed comprising at least two circuit layers interconnected with a plurality of substantially equi-length nanowires disposed therebetween. The nanowires may comprise composites, e.g., having a heterojunction present along the length thereof, to provide for a variety of device applications. Also disclosed is a method for making the circuit device comprising growing a plurality of nanowires in-situ on at least one circuit substrate and then interconnecting the nanowires to a mating substrate.
Claims19
A method of making an interconnected circuit device comprising at least a first and a second circuit substrate and a plurality of substantially parallel nanowires disposed between them, the method comprising the steps of
- aligning the at least first and second circuit substrates in a spaced-apart substantially parallel relation to define a gap therebetween;
- depositing a catalytic nucleation layer on at least the first circuit substrate;
- growing the plurality of nanowires from the catalytic nucleation layer on at least the first circuit substrate;
- and
- connecting the grown nanowires to the second circuit substrate to provide the interconnected circuit device.
A method of making an interconnected circuit device comprising at least two circuit substrates, at least one contact pad on each of the at least two circuit substrates to define at least a first and a second contact pad, and a plurality of substantially parallel nanowires disposed between the first and second contact pads to interconnect the two circuit substrates, the method comprising the steps of:
- aligning the two circuit substrates in a spaced-apart substantially parallel orientation to define a gap therebetween having a predetermined size wherein the first contact pad is aligned facing the second contact pad;
- depositing a catalytic nucleation layer on the surface of at least the first contact pad;
- growing the plurality of nanowires from the catalytic nucleation layer of at least the first contact pad;
- and
- connecting the grown nanowires to one of the second contact pad or nanowires grown thereon to provide the interconnected circuit device.
A method of making an interconnected circuit device comprising:
- providing at least two circuit substrates, wherein at least one contact pad is disposed on each of the at least two circuit substrates to define at least a first and a second contact pad,
- depositing a catalytic nucleation layer on the surfaces of the first and second contact
- aligning the two circuit substrates in a spaced-apart substantially parallel orientation to define a gap therebetween wherein the first contact pad is aligned facing the second contact pad;
- growing a plurality of nanowires from the surfaces of the first and second contact pads with an electric field being applied to promote growth of the nanowires in a direction substantially perpendicular to the contact pads, whereby a plurality of nanowires grown from the first contact pad merge with a plurality of nanowires grown from the second contact pad to thereby provide an interconnected circuit device.
Dependencies are inferred from the claim text.