Bulk single crystals of aluminum nitride
AssigneeCree, Inc.
InventorCharles Eric Hunter
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Abstract
Bulk, low impurity aluminum nitride (AlN) single crystals are grown by sublimation or similar deposition techniques at growth rates greater than 0.5 mm/hr.
Claims10
A bulk single crystal of AlN grown by deposition of vapor species containing Al and N on a seed crystal growth surface, said bulk single crystal having a sufficient size and sufficient purity to permit its use in electronic applications, with the crystal having a diameter greater than about one inch and the purity of the crystal being characterized by the crystal lattice structure thereof having a level of nonintentionally introduced impurities below about 450 ppm.
A bulk single crystal of intentionally doped n-type or p-type AlN grown by deposition of vapor species containing Al and N on a seed crystal growth surface in the presence of doping atoms, said bulk single crystal of AlN having an electrical resistivity below 0.30 ohms-cm and a diameter greater than one inch.
A bulk single crystal of intentionally doped n-type or p-type AlN grown by deposition of vapor species containing Al and N on a seed crystal growth surface in the presence of doping atoms, said bulk single crystal of AlN being compensated by the doping thereof and having a diameter greater than one inch.
Dependencies are inferred from the claim text.