# US 6,296,717 B1 · Regeneration of chemical mechanical polishing pads in-situ

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- Number: US 6,296,717 B1
- Document ID: US6296717B1
- Status: Granted
- Kind: B1
- Application number: 09/330,657
- Filed: 1999-06-11
- Granted: 2001-10-02
- Earliest claimed: 1999-06-11
- Assignees: International Business Machines Corporation
- Inventors: Adam D. Ticknor; Karl E. Boggs; Kenneth M. Davis; William F. Landers; Michael L. Passow
- Web page: https://patentgrep.com/patent/US6296717B1

## CPC

- B24B 37/042: {operating processes therefor}
- H10P 52/402: {of semiconductor materials}
- B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

An in-situ method for regenerating a chemical-mechanical polishing pad which includes the steps of: forming the polishing pad by dispensing liquid moldable material, such as wax, polymers or water, on a polishing surface and solidifying the liquid material by reducing the temperature, allowing the moldable material to harden; distributing slurry material on the polishing pad; polishing the surface of a semiconductor wafer with a combination of the slurry material and the polishing pad; and regenerating in-situ the polishing pad. This method quickly, easily and repeatably, resurfaces and refreshes the surface on which the a semiconductor wafer is polished. The polishing pad may also include abrasives embedded therein to enhance its polishing capabilities.

## Claims

### Claim 1

A method for regenerating in-situ a chemical-mechanical polishing pad comprising the steps:
providing a polishing surface;
forming said polishing pad by dispensing liquid material on said polishing surface and solidifying said liquid material;
distributing slurry material on said polishing pad;
polishing the surface of a semiconductor wafer with said polishing pad in combination with said slurry material; and
remolding in-situ said polishing pad by liquifying said polishing pad, partially draining some of said liquified material and resolidifying the remaining of said liquified material.

### Claim 2 (depends on 1)

The method as recited in claim 1, wherein said remolded polishing pad is provided with a resilient planar polishing surface.

### Claim 3 (depends on 1)

The method as recited in claim 1, wherein said polishing pad is made of a material which is selected from the group consisting of wax, polymers and water.

### Claim 4 (depends on 1)

The method as recited in claim 1, wherein said polishing pad is made of a material which becomes moldable at elevated temperatures.

### Claim 5 (depends on 1)

The method as recited in claim 1, wherein in-situ regeneration is achieved by mechanically scraping the surface of said polishing pad and removing portions thereof.

### Claim 6 (depends on 1)

The method as recited in claim 1, further comprising the step of purifying in-situ spent pad material.

### Claim 7 (depends on 1)

The method as recited in claim 1, further comprising the step of texturing the surface of said polishing pad by dragging added slurry material underneath said polishing pad when polishing the surface of a semiconductor wafer.

### Claim 8 (depends on 7)

The method as recited in claim 7, wherein texturing said polishing pad comprises the step of embossing a predetermined pattern on said polishing pad.

### Claim 9 (depends on 7)

The method as recited in claim 7, wherein said texturing is achieved by heating selected portions of said polishing pad.

### Claim 10 (depends on 1)

The method as recited in claim 1, further comprising the steps of:
enclosing said liquid polishing pad in a chamber and solidifying said liquid material; and
opening said chamber and polishing said semiconductor wafer with an exposed surface of said solidified material.

### Claim 11 (depends on 1)

The method as recited in claim 1, wherein said slurry includes abrasive particles within a chemical solution.

### Claim 12

A method for regenerating in-situ a chemical-mechanical polishing pad (CMP) comprising the steps:
providing a polishing surface;
forming said polishing pad by dispensing liquid material on said polishing surface and solidifying said liquid material;
distributing slurry material on said polishing pad;
polishing the surface of a semiconductor wafer with said polishing pad in combination with said slurry material; and
remolding in-situ said polishing pad by liquifying said polishing pad, partially draining some of said liquified material, adding fresh liquid material to the bottom of said polishing pad and resolidifying the combination of said remaining liquified material and said added fresh liquid material.

### Claim 13

A method for regenerating in-situ a chemical-mechanical polishing pad (CMP) comprising the steps:
providing a polishing surface;
forming said polishing pad by dispensing liquid material on said polishing surface and solidifying said liquid material;
distributing slurry material on said polishing pad,
polishing the surface of a semiconductor wafer with a combination of said polishing pad and said slurry; and
remolding in-situ said polishing pad by liquifying said polishing pad, partially draining some of said liquified polishing pad, adding fresh liquid and slurry material said liquified polishing pad and resolidifying the combination of a remaining of said liquified polishing pad, said added fresh liquid and said slurry material.

### Claim 14 (depends on 7)

The method as recited in claim 7, wherein said texturing is achieved by imprinting said polishing pad with a pattern plate or roller.
