# US 6,294,803 B1 · Semiconductor device having trench with vertically formed field oxide

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- Number: US 6,294,803 B1
- Document ID: US6294803B1
- Status: Granted
- Kind: B1
- Application number: 09/421,089
- Filed: 1999-10-19
- Granted: 2001-09-25
- Earliest claimed: 1996-10-22
- Assignees: LG Semicon Co., Ltd.
- Inventors: Gyoung Seon Gil
- Web page: https://patentgrep.com/patent/US6294803B1

## CPC

- H10W 10/012: {using local oxidation of silicon [LOCOS]}
- H10D 84/0151: {Manufacturing their isolation regions}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10W 10/13: formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device includes a substrate, a plurality of active regions on the substrate, the active regions having recessed and elevated types and being alternatively in parallel with the substrate, respectively, and a plurality of first and second field insulating layers at field regions adjacent to the active regions, the first field insulating layer being parallel with the substrate and the second field insulating layer being perpendicular to the substrate.

## Claims

### Claim 1

A semiconductor device comprising:
a substrate;
a plurality of active regions formed in rows in the substrate, each of the active regions in a row being at a vertical level in the substrate different from the vertical level of an adjacent active region in a row;
a plurality of active regions formed in columns in the substrate, each of the active regions in a column being at a vertical level in the substrate different from the vertical level of an adjacent active region in a column; and
a field insulating layer separating adjacent active regions in a row, each of the field insulating layers having a thickness in the direction of a row and a height in a direction perpendicular to the substrate and to the thickness of the layer, the height of each of the field insulating layer being greater than the thickness thereof.

### Claim 2 (depends on 1)

The device according to claim 1, wherein the active regions in columns in the substrate have the same vertical level.

### Claim 3 (depends on 1)

The device according to claim 1, wherein each adjacent pair of the active regions in rows and columns in the substrate has the different vertical level.

### Claim 4 (depends on 1)

The device according to claim 1, further comprising a plurality of channel stop regions at each side of the first and second walls of the active regions adjacent to the field insulating layer.