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US 6,294,799 B1Granted
Semiconductor device and method of fabricating same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Takeshi Fukunaga
Life of this patent
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Abstract
A semiconductor device having reliable electrode contacts. First, an interlayer dielectric film is formed from a resinous material. Then, window holes are formed. The interlayer dielectric film is recessed by oxygen plasma. This gives rise to tapering window holes. This makes it easy to make contacts even if the circuit pattern is complex.
Claims32
A semiconductor device comprising:
- a transistor comprising a source region, a drain region, a channel formation region provided between said source region and said drain region, and a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween;
- a multilayer dielectric film provided over said transistor and including an insulating layer comprising silicon and a top layer made of a resinous material provided on said insulating layer comprising silicon;
- a contact hole provided in said insulating layer comprising silicon and said top layer, a part of said contact hole provided in said top layer being provided over a part of said contact hole provided in said insulating layer comprising silicon;
- and
- a wiring extending in said part of said contact hole provided in said top layer and extending in said part of said contact hole provided in said insulating layer comprising silicon, and extending over said top layer, said wiring being connected with one of said source region and said drain region,
- wherein said part of said contact hole provided in said top layer provides a wider opening than said part of said contact hole provided in said insulating layer comprising silicon,
- wherein said insulating layer comprising silicon has an upper face within said contact hole, and said wiring is provided on said upper face within said part of said contact hole provided in said top layer, and
- wherein said part of said contact hole provided in said insulating layer comprising silicon is concentric with said part of said contact hole provided in said top layer.
5 more elements
A semiconductor device comprising:
- a thin film transistor comprising a source region, a drain region, a channel formation region provided between said source region and said drain region, and a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween;
- a multilayer dielectric film provided over said thin film transistor and including an insulating layer comprising silicon and a top layer made of a resinous material provided on said insulating layer comprising silicon;
- a contact hole provided in said insulating layer comprising silicon and said top layer, a part of said contact hole provided in said top layer being provided over a part of said contact hole provided in said insulating layer comprising silicon;
- and
- a wiring extending in said part of said contact hole provided in said top layer and extending in said part of said contact hole provided in said insulating layer comprising silicon, and extending over said top layer, said wiring being connected with one of said source region and said drain region,
- wherein said part of said contact hole provided in said top layer provides a wider opening than said part of said contact hole provided in said insulating layer comprising silicon,
- wherein said insulating layer comprising silicon has an upper face within said contact hole, and said wiring is provided on said upper face within said part of said contact hole provided in said top layer, and
- wherein said part of said contact hole provided in said insulating layer comprising silicon is concentric with said part of said contact hole provided in said top layer.
5 more elements
A semiconductor device comprising:
- a transistor comprising a source region, a drain region, a channel formation region provided between said source region and said drain region, and a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween;
- a multilayer dielectric film provided over said transistor and including an insulating layer comprising silicon and a top layer made of a resinous material provided on said insulating layer comprising silicon;
- a contact hole provided in said insulating layer comprising silicon and said top layer, a part of said contact hole provided in said top layer being provided over a part of said contact hole provided in said insulating layer comprising silicon;
- and
- a wiring extending in said part of said contact hole provided in said top layer and extending in said part of said contact hole provided in said insulating layer comprising silicon, and extending over said top layer, said wiring being connected with one of said source region and said drain region,
- wherein said part of said contact hole provided in said top layer provides a wider opening than said part of said contact hole provided in said insulating layer comprising silicon,
- wherein said insulating layer comprising silicon has an upper face within said contact hole, and said wiring is provided on said upper face within said part of said contact hole provided in said top layer,
- wherein said part of said contact hole provided in said insulating layer comprising silicon is concentric with said part of said contact hole provided in said top layer, and
- wherein said wiring comprises indium tin oxide.
6 more elements
A semiconductor device comprising:
- a transistor comprising a source region, a drain region, a channel formation region provided between said source region and said drain region, and a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween;
- a multilayer dielectric film provided over said transistor and including an insulating layer comprising silicon and a top layer made of a resinous material provided on said insulating layer comprising silicon;
- a contact hole provided in said insulating layer comprising silicon and said top layer, a part of said contact hole provided in said top layer being provided over a part of said contact hole provided in said insulating layer comprising silicon;
- and
- a wiring extending in said part of said contact hole provided in said top layer and extending in said part of said contact hole provided in said insulating layer comprising silicon, and extending over said top layer, said wiring being connected with one of said source region and said drain region,
- wherein said part of said contact hole provided in said top layer provides a wider opening than said part of said contact hole provided in said insulating layer comprising silicon,
- wherein said insulating layer comprising silicon has an upper face within said contact hole, and said wiring is provided on said upper face within said part of said contact hole provided in said top layer,
- wherein said part of said contact hole provided in said insulating layer comprising silicon is concentric with said part of said contact hole provided in said top layer, and
- wherein said semiconductor device comprises an active matrix EL display.
6 more elements
A semiconductor device comprising:
- a transistor comprising a source region, a drain region, a channel formation region provided between said source region and said drain region, and a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween;
- a multilayer dielectric film provided over said transistor and including an insulating layer comprising silicon and a top layer made of a resinous material provided on said insulating layer comprising silicon;
- a contact hole provided in said insulating layer comprising silicon and said top layer, a part of said contact hole provided in said top layer being provided over a part of said contact hole provided in said insulating layer comprising silicon;
- and
- a wiring extending in said part of said contact hole provided in said top layer and extending in said part of said contact hole provided in said insulating layer comprising silicon, and extending over said top layer, said wiring being connected with one of said source region and said drain region,
- wherein said part of said contact hole provided in said top layer provides a wider opening than said part of said contact hole provided in said insulating layer comprising silicon,
- wherein said insulating layer comprising silicon has an upper face within said contact hole, and said wiring is provided on said upper face within said part of said contact hole provided in said top layer,
- wherein said part of said contact hole provided in said insulating layer comprising silicon is concentric with said part of said contact hole provided in said top layer, and
- wherein said semiconductor device comprises an active matrix liquid crystal display.
6 more elements
A semiconductor device comprising:
- a transistor comprising a source region, a drain region, a channel formation region provided between said source region and said drain region, and a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween;
- a multilayer dielectric film provided over said transistor and including an insulating layer comprising silicon and a top layer made of a resinous material provided on said insulating layer comprising silicon;
- a contact hole provided in said insulating layer comprising silicon and said top layer, a part of said contact hole provided in said top layer being provided over a part of said contact hole provided in said insulating layer comprising silicon;
- and
- a wiring extending in said part of said contact hole provided in said top layer and extending in said part of said contact hole provided in said insulating layer comprising silicon, and extending over said top layer, said wiring being connected with one of said source region and said drain region,
- wherein said part of said contact hole provided in said top layer provides a wider opening than said part of said contact hole provided in said insulating layer comprising silicon,
- wherein said insulating layer comprising silicon has an upper face within said contact hole, and said wiring is provided on said upper face within said part of said contact hole provided in said top layer,
- wherein said part of said contact hole provided in said insulating layer comprising silicon is concentric with said part of said contact hole provided in said top layer, and
- wherein said semiconductor device comprises an active matrix plasma display.
6 more elements
A semiconductor device comprising:
- a transistor comprising a source region, a drain region, a channel formation region provided between said source region and said drain region, and a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween;
- a multilayer dielectric film provided over said transistor and including an insulating layer comprising silicon and a top layer made of a resinous material provided on said insulating layer comprising silicon;
- a contact hole provided in said insulating layer comprising silicon and said top layer, a part of said contact hole provided in said top layer being provided over a part of said contact hole provided in said insulating layer comprising silicon;
- and
- a wiring extending in said part of said contact hole provided in said top layer and extending in said part of said contact hole provided in said insulating layer comprising silicon, and extending over said top layer, said wiring being connected with one of said source region and said drain region,
- wherein said part of said contact hole provided in said top layer provides a wider opening than said part of said contact hole provided in said insulating layer comprising silicon,
- wherein said insulating layer comprising silicon has an upper face within said contact hole, and said wiring is provided on said upper face within said part of said contact hole provided in said top layer, and
- wherein said part of said contact hole provided in said insulating layer comprising silicon is concentric with said part of said contact hole provided in said top layer, and
- wherein said insulating layer comprising silicon comprises a material selected from the group consisting of silicon oxide, silicon nitride and silicon oxynitride.
6 more elements
Dependencies are inferred from the claim text.