# US 6,294,472 B1 · Dual slurry particle sizes for reducing microscratching of wafers

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- Number: US 6,294,472 B1
- Document ID: US6294472B1
- Status: Granted
- Kind: B1
- Application number: 09/576,750
- Filed: 2000-05-23
- Granted: 2001-09-25
- Earliest claimed: 2000-05-23
- Assignees: Advanced Micro Devices, Inc.
- Inventors: Jonathan B. Smith; Paul R. Besser; Jeremy I. Martin
- Web page: https://patentgrep.com/patent/US6294472B1

## CPC

- C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)}
- B24B 37/044: {characterised by the composition of the lapping agent}
- B24B 57/02: for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
- H10P 52/402: {of semiconductor materials}
- C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES
- B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method includes providing at least one wafer having a process layer formed thereon for polishing. The process layer is polished using a first polishing process that is associated with a slurry having a first abrasive particle size. The process layer is polished using a second polishing process that is associated with a slurry having a second abrasive particle size that is different from the first abrasive particle size. A system includes a polishing tool and a process controller. The polishing tool is adapted to receive at least one wafer having a process layer formed thereon for polishing. The polishing tool is adapted to polish the process layer using a first polishing process that is associated with a slurry having a first abrasive particle size. The polishing tool is adapted to polish the process layer using a second polishing process that is associated with a slurry having a second abrasive particle size that is different from the first abrasive particle size. The process controller is coupled to the polishing tool and adapted to communicate with at least one of a slurry controller and the polishing tool.

## Claims

### Claim 1

A method, comprising:
providing at least one wafer having a process layer formed thereon for polishing;
polishing the process layer using a first polishing process that is associated with a slurry having a first abrasive particle size;
polishing the process layer using a second polishing process that is associated with a slurry having a second abrasive particle size, the second abrasive particle size being less than the first abrasive particle size;
filtering the slurry during the first polishing process through a first filter;
filtering the slurry from the first polishing process through a second filter, the second filter being more restrictive than the first filter; and
re-circulating the slurry from the second filter back to the second polishing process.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
processing the slurry from the first polishing process through a slurry re-circulation loop;
replacing the slurry from the first polishing process with a second slurry that is associated with the second abrasive particle size; and
circulating the second slurry to the second polishing process.

### Claim 3 (depends on 2)

The method of claim 2, further comprising:
capturing at least a portion of the slurry from the first polishing process using a first slurry re-circulation loop; and
switching to a second slurry re-circulation loop for the second polishing process, the second slurry re-circulation loop being comprised of the second slurry.

### Claim 4 (depends on 1)

The method of claim 1, wherein polishing the process layer using a first polishing process comprises polishing the process layer with a slurry having an abrasive particle size that ranges between approximately 0.5 to 1 μm.

### Claim 5 (depends on 1)

The method of claim 1, wherein polishing the process layer using a second polishing process comprises polishing the process layer with a slurry having an abrasive particle size that ranges between approximately 0.2 to 0.3 m.

### Claim 6 (depends on 1)

The method of claim 1, further comprising buffing a post-polish surface of the process layer.

### Claim 7 (depends on 1)

The method of claim 1, wherein polishing the process layer using a second polishing process comprises polishing the process layer with a slurry having an abrasive particle composition that approximately matches a composition of a material being polished.

### Claim 8

A method, comprising:
providing at least one wafer for polishing;
polishing a processing surface of the at least one wafer using a first polishing process that is associated with a slurry having a first abrasive particle size;
polishing the processing surface of the at least one wafer using a second polishing process that is associated with a slurry having a second abrasive particle size, the second abrasive particle size being less than the first abrasive particle size;
filtering the slurry during the first polishing process through a first filter;
filtering the slurry from the first polishing process through a second filter, the second filter being more restrictive than the first filter; and
re-circulating the slurry from the second filter back to the second polishing process.

### Claim 9 (depends on 8)

The method of claim 8, wherein polishing the processing layer of the at least one wafer using a first polishing process comprises polishing the processing surface with a slurry having an abrasive particle size that ranges between approximately 0.5 to 1 μm.

### Claim 10 (depends on 8)

The method of claim 8, wherein polishing the processing layer of the at least one wafer using a second polishing process comprises polishing the processing surface with a slurry having an abrasive particle size that ranges between approximately 0.2 to 0.3 μm.

### Claim 11 (depends on 8)

The method of claim 8, further comprising buffing a post-polish surface of the at least one wafer.

### Claim 12 (depends on 8)

The method of claim 8, wherein polishing the processing surface of the at least one wafer using a second polishing process comprises polishing the processing surface with a slurry having an abrasive particle composition that approximately matches a composition of a material being polished.

### Claim 13

A system, comprising:
a polishing tool for polishing wafers, the polishing tool being adapted to:
receive at least one wafer having a process layer formed theron for polishing;
polish the process layer using a first polishing process that is associated with a slurry having a first abrasive particle size; and
polish the process layer using a second polishing process that is associated with a slurry having a second polishing process, the second abrasive particle size being different from the first abrasive particle size; and
a process controller coupled to the polishing tool, the process controller being adapted to communicate with at least one of a slurry controller and the polishing tool.

### Claim 14 (depends on 13)

The system of claim 13, further comprising a first filter for controlling the slurry particle size during the first polishing process and a second filter for controlling the slurry particle size during the second polishing process.

### Claim 15 (depends on 14)

The system of claim 14, wherein the first filter is associate with a first particle throughput and the second filter is associated with a second particle throughput, the second particle throughput being more restrictive than the first particle throughput.

### Claim 16 (depends on 14)

The system of claim 14, wherein the first filter is associate with a first particle throughput and the second filter is associated with a second particle throughput, the second particle throughput being less restrictive than the first particle throughput.

### Claim 17 (depends on 13)

The system of claim 13, wherein the polishing tool is adapted to replace the slurry used during the first polishing process with a second slurry used during the second polishing process, the second slurry being associated with the second abrasive particle size.

### Claim 18 (depends on 13)

The system of claim 13, further comprising:
a first slurry re-circulation loop for sustaining the abrasive particle size for the slurry used in the first polishing process; and
a second slurry re-circulation loop for sustaining the abrasive particle size for the second slurry used in the second polishing process.

### Claim 19 (depends on 13)

The system of claim 13, wherein the first particle size is greater than the second particle size.

### Claim 20 (depends on 13)

The system of claim 13, wherein the first particle size is less than the second particle size.

### Claim 21 (depends on 13)

The system of claim 13, wherein the polishing tool is adapted to polish the process layer during the second polishing process with a slurry having an abrasive particle composition that approximately matches a composition of a material being polished.

### Claim 22 (depends on 13)

The system of claim 13, further comprising a buffing tool adapted to buff a post-polish surface of the process layer.

### Claim 23

A computer readable program storage device encoded with instructions that, when executed by a computer, performs a method for controlling a polishing tool in a manufacturing process, comprising:
providing at least one wafer having a process layer formed thereon for polishing;
polishing the process layer using a first polishing process that is associated with a slurry having a first abrasive particle size; and
polishing the process layer using a second polishing process that is associated with a slurry having a second abrasive particle size, the second abrasive particle size being different from the first abrasive particle size.

### Claim 24 (depends on 23)

The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 23, wherein polishing the process layer using a second polishing process further comprises polishing the process layer with a slurry having a second abrasive particle size, the second abrasive particle size being less than the first abrasive particle size.

### Claim 25 (depends on 24)

The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 24, further comprising:
filtering the slurry during the first polishing process through a first filter;
filtering the slurry from the first polishing process through a second filter, the second filter being more restrictive than the first filter; and
re-circulating the slurry from the second filter back to the second polishing process.

### Claim 26 (depends on 24)

The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 24, further comprising:
processing the slurry from the first polishing process through a slurry re-circulation loop;
replacing the slurry from the first polishing process with a second slurry that is associated with the second abrasive particle size; and
circulating the second slurry to the second polishing process.

### Claim 27 (depends on 26)

The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 26, further comprising:
capturing at least a portion of the slurry from the first polishing process using a first slurry re-circulation loop; and
switching to a second slurry re-circulation loop for the second polishing process, the second slurry re-circulation loop being comprised of the second slurry.

### Claim 28 (depends on 23)

The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 23, wherein polishing the process layer using a second polishing process further comprises polishing the process layer with a slurry having a second abrasive particle size, the second abrasive particle size being greater than the first abrasive particle size.

### Claim 29 (depends on 28)

The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 28, further comprising:
filtering the slurry during the first polishing process through a first filter;
replacing the filter from the first polishing process with a second filter, the second filter being less restrictive than the first filter;
introducing new abrasive particles to the slurry from the first polishing process; and
re-circulating the slurry from the second filter back to the second polishing process.

### Claim 30 (depends on 28)

The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 28, further comprising:
processing the slurry from the first polishing process through a slurry re-circulation loop;
replacing the slurry from the first polishing process with a second slurry that is associated with the second abrasive particle size; and
circulating the second slurry to the second polishing process.

### Claim 31 (depends on 30)

The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 30, further comprising:
capturing at least a portion of the slurry from the first polishing process using a first slurry re-circulation loop; and
switching to a second slurry re-circulation loop for the second polishing process, the second slurry re-circulation loop being comprised of the second slurry.

### Claim 32 (depends on 23)

The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 23, wherein polishing the process layer using a second polishing process further comprises polishing the process layer with a slurry having an abrasive particle composition that approximately matches a composition of a material being polished.

### Claim 33

A system, comprising:
means for receiving at least one wafer having a process layer formed thereon for polishing;
means for polishing the process layer using a first polishing process that is associated with a slurry having a first abrasive particle size; and
means for polishing the process layer using a second polishing process that is associated with a slurry having a second abrasive particle size, the second abrasive particle size being different from the first abrasive particle size.

### Claim 34

A method, comprising:
providing at least one wafer having a process layer formed thereon for polishing;
polishing the process layer using a first polishing process that is associated with a slurry having a first abrasive particle size;
polishing the process layer using a second polishing process that is associated with a slurry having a second abrasive particle size, the second abrasive particle size being less than the first abrasive particle size;
processing the slurry from the first polishing process through a slurry re-circulation loop;
replacing the slurry from the first polishing process with a second slurry that is associated with the second abrasive particle size; and
circulating the second slurry to the second polishing process.

### Claim 35 (depends on 34)

The method of claim 34, further comprising:
filtering the slurry during the first polishing process through a first filter;
filtering the slurry from the first polishing process through a second filter, the second filter being more restrictive than the first filter; and
re-circulating the slurry from the second filter back to the second polishing process.

### Claim 36 (depends on 34)

The method of claim 34, further comprising:
capturing at least a portion of the slurry from the first polishing process using a first slurry re-circulation loop; and
switching to a second slurry re-circulation loop for the second polishing process, the second slurry re-circulation loop being comprised of the second slurry.

### Claim 37 (depends on 34)

The method of claim 34, wherein polishing the process layer using a first polishing process comprises polishing the process layer with a slurry having an abrasive particle size that ranges between approximately 0.5 to 1 μm.

### Claim 38 (depends on 34)

The method of claim 34, wherein polishing the process layer using a second polishing process comprises polishing the process layer with a slurry having an abrasive particle size that ranges between approximately 0.2 to 0.3 μm.

### Claim 39 (depends on 34)

The method of claim 34, further comprising buffing a post-polish surface of the process layer.

### Claim 40 (depends on 34)

The method of claim 34, wherein polishing the process layer using a second polishing process comprises polishing the process layer with a slurry having an abrasive particle composition that approximately matches a composition of a material being polished.

### Claim 41

A method, comprising:
providing at least one wafer having a process layer formed thereon for polishing;
polishing the process layer using a first polishing process that is associated with a slurry having a first abrasive particle size;
polishing the process layer using a second polishing process that is associated with a slurry having a second abrasive particle size, the second abrasive particle size being greater than the first abrasive particle size;
filtering the slurry during the first polishing process through a first filter;
replacing the filter from the first polishing process with a second filter, the second filter being less restrictive than the first filter;
introducing new abrasive particles to the slurry from the first polishing process; and
re-circulating the slurry from the second filter back to the second polishing process.

### Claim 42 (depends on 41)

The method of claim 41, further comprising:
processing the slurry from the first polishing process through a slurry re-circulation loop;
replacing the slurry from the first polishing process with a second slurry that is associated with the second abrasive particle size; and
circulating the second slurry to the second polishing process.

### Claim 43 (depends on 42)

The method of claim 42, further comprising:
capturing at least a portion of the slurry from the first polishing process using a first slurry re-circulation loop; and
switching to a second slurry re-circulation loop for the second polishing process, the second slurry re-circulation loop being comprised of the second slurry.

### Claim 44 (depends on 41)

The method of claim 41, wherein polishing the process layer using a first polishing process comprises polishing the process layer with a slurry having an abrasive particle size that ranges between approximately 0.5 to 1 μm.

### Claim 45 (depends on 41)

The method of claim 41, wherein polishing the process layer using a second polishing process comprises polishing the process layer with a slurry having an abrasive particle size that ranges between approximately 0.2 to 0.3 μm.

### Claim 46 (depends on 41)

The method of claim 41, further comprising buffing a post-polish surface of the process layer.

### Claim 47 (depends on 41)

The method of claim 41, wherein polishing the process layer using a second polishing process comprises polishing the process layer with a slurry having an abrasive particle composition that approximately matches a composition of a material being polished.

### Claim 48

A method, comprising:
providing at least one wafer having a process layer formed thereon for polishing;
polishing the process layer using a first polishing process that is associated with a slurry having a first abrasive particle size;
polishing the process layer using a second polishing process that is associated with a slurry having a second abrasive particle size, the second abrasive particle size being greater than the first abrasive particle size;
processing the slurry from the first polishing process through a slurry re-circulation loop;
replacing the slurry from the first polishing process with a second slurry that is associated with the second abrasive particle size; and
circulating the second slurry to the second polishing process.

### Claim 49

The method of claimed 48, further comprising:
filtering the slurry during the first polishing process through a first filter;
replacing the filter from the first polishing process with a second filter, the second filter being less restrictive than the first filter;
introducing new abrasive particles to the slurry from the first polishing process; and
re-circulating the slurry from the second filter back to the second polishing process.

### Claim 50 (depends on 48)

The method of claim 48, further comprising:
capturing at least a portion of the slurry from the first polishing process using a first slurry re-circulation loop; and
switching to a second slurry re-circulation loop for the second polishing process, the second slurry re-circulation loop being comprised of the second slurry.

### Claim 51 (depends on 48)

The method of claim 48, wherein polishing the process layer using a first polishing process comprises polishing the process layer with a slurry having an abrasive particle size that ranges between approximately 0.5 to 1 μm.

### Claim 52 (depends on 48)

The method of claim 48, wherein polishing the process layer using a second polishing process comprises polishing the process layer with a slurry having an abrasive particle size that ranges between approximately 0.2 to 0.3 μm.

### Claim 53 (depends on 48)

The method of claim 48, further comprising buffing a post-polish surface of the process layer.

### Claim 54 (depends on 48)

The method of claim 48, wherein polishing the process layer using a second polishing process comprises polishing the process layer with a slurry having an abrasive particle composition that approximately matches a composition of a material being polished.

### Claim 55

A method, comprising:
providing at least one wafer for polishing;
polishing a processing surface of the at least one wafer using a first polishing process that is associated with a slurry having a first abrasive particle size;
polishing the processing surface of the at least one wafer using a second polishing process that is associated with a slurry having a second abrasive particle size, the second abrasive particle size being greater than the first abrasive particle size;
filtering the slurry during the first polishing process through a first filter;
replacing the filter from the first polishing process with a second filter, the second filter being less restrictive than the first filter;
introducing new abrasive particles to the slurry from the first polishing process; and
re-circulating the slurry from the second filter back to the second polishing process.

### Claim 56 (depends on 55)

The method of claim 55, wherein polishing the processing layer of the at least one wafer using a first polishing process comprises polishing the processing surface with a slurry having an abrasive particle size that ranges between approximately 0.5 to 1 μm.

### Claim 57 (depends on 55)

The method of claim 55, wherein polishing the processing layer of the at least one wafer using a second polishing process comprises polishing the processing surface with a slurry having an abrasive particle size that ranges between approximately 0.2 to 0.3 μm.

### Claim 58 (depends on 55)

The method of claim 55, further comprising buffing a post-polish surface of the at least one wafer.

### Claim 59 (depends on 55)

The method of claim 55, wherein polishing the processing surface of the at least one wafer using a second polishing process comprises polishing the processing surface with a slurry having an abrasive particle composition that approximately matches a composition of a material being polished.