# US 6,294,463 B1 · Method for manufacturing diffusion barrier layer

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- Number: US 6,294,463 B1
- Document ID: US6294463B1
- Status: Granted
- Kind: B1
- Application number: 09/661,425
- Filed: 2000-09-13
- Granted: 2001-09-25
- Earliest claimed: 2000-09-13
- Assignees: Vanguard International Semiconductor Corporation
- Inventors: Horng-Huei Tseng
- Web page: https://patentgrep.com/patent/US6294463B1

## CPC

- H10W 20/039: {also covering sidewalls of the conductive structures}
- H10W 20/051: {by ion implantation}
- H10W 20/0526: {by thermal treatment thereof}
- H10W 20/055: {by formation methods other than physical vapour deposition [PVD], chemical vapour deposition [CVD] or liquid deposition}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method for manufacturing a diffusion barrier layer over a substrate having a patterned copper layer. A refractory metal layer or a nitride layer of refractor metal is formed on the substrate and a top surface and a sidewall of the patterned copper layer. The refractory metal layer or the nitride layer of refractor metal is converted by HDP treatment into an implanted layer as a diffusion barrier layer, where gas of N2, O2, NH3, NO2; or N2O are used for producing implanting ions. A thermal process is performed stabilize a diffusion barrier quality of the oxygen-containing implantation layer.

## Claims

### Claim 1

A method for manufacturing a diffusion barrier layer over a substrate having a patterned copper layer, the method comprising the steps of:
forming a refractory metal layer on the substrate and a top surface and a sidewall of the patterned copper layer;
performing a high density plasma (HDP) treatment to convert the refractory metal layer into an implantation layer which serves as a diffusion barrier layer; and
performing a thermal process to stabilize a diffusion barrier quality of the implantation layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein the step of performing the HDP treatment comprises using one gas selected from a group consisting of O2 and N2O.

### Claim 3 (depends on 1)

The method of claim 1, wherein the step of performing the HDP treatment comprises using one gas selected from a group consisting of N2, NH3, and N2O.

### Claim 4 (depends on 1)

The method of claim 1, wherein the step of performing the HDP treatment comprises implanting oxygen and nitrogen.

### Claim 5 (depends on 1)

The method of claim 1, wherein the implantation layer includes a titanium oxynitride (TiNOx) layer.

### Claim 6 (depends on 1)

The method of claim 1, wherein the refractory metal layer is formed from titanium by deposition.

### Claim 7

A method for manufacturing a diffusion barrier layer over a substrate having a patterned copper layer, the method comprising the steps of:
forming a nitride layer of refractory metal on the substrate and a top surface and a sidewall of the patterned copper layer;
performing a plasma treatment to convert the nitride layer of refractory metal into an implantation layer which serves as a diffusion barrier layer; and
performing a thermal process to stabilize a diffusion barrier, quality of the implantation layer.

### Claim 8 (depends on 7)

The method of claim 7, wherein the step of performing the plasma treatment comprises performing a high density plasma (HDP) treatment.

### Claim 9 (depends on 7)

The method of claim 7, wherein the step of performing the plasma treatment comprises using one gas selected from a group consisting of O2 and N2O.

### Claim 10 (depends on 7)

The method of claim 7, wherein the step of performing the plasma treatment comprises using one gas selected from a group consisting of N2, NH3, and N2O.

### Claim 11 (depends on 7)

The method of claim 7, wherein the step of performing the plasma treatment comprises implanting oxygen and nitrogen.

### Claim 12 (depends on 7)

The method of claim 7, wherein the step of forming the nitride layer of refractory metal comprises forming a titanium nitride layer.

### Claim 13 (depends on 7)

The method of claim 7, wherein the step of forming the nitride layer of refractory metal comprises deposition.

### Claim 14 (depends on 7)

The method of claim 7, wherein the implantation layer includes a titanium oxynitride (TiNOx) layer.