# US 6,294,296 B1 · Method and device for mutually aligning a mask pattern formed in a mask and a substrate

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- Number: US 6,294,296 B1
- Document ID: US6294296B1
- Status: Granted
- Kind: B1
- Application number: 09/510,875
- Filed: 2000-02-22
- Granted: 2001-09-25
- Earliest claimed: 1999-10-11
- Assignees: Carl-Zeiss-Stiftung
- Inventors: Bernhard Weigl
- Web page: https://patentgrep.com/patent/US6294296B1

## CPC

- G03F 9/7088: {Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection}
- G03F 9/7049: {Technique, e.g. interferometric}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

In a method for mutually aligning a mask pattern formed in a mask 1 and a substrate 2, on which the mask pattern is to be imaged, by using setting marks 12a, 12b and 13a or 13b in the mask 1 and in the substrate 2, the alignment is performed with the aid of an imaging system and a light beam with polarized light 9. A phase shift for the first diffraction orders 20 is undertaken in the beam path 9a, 9b. Higher diffraction orders 21 and unwanted light are filtered out after the phase shift, and after the filtering out the light beams of the first diffraction orders 20 are detected, and the result is evaluated for the purpose of alignment.

## Claims

### Claim 1

A method for mutually aligning a mask pattern formed in a mask and a substrate, on which the mask pattern is to be imaged, by using setting marks in the mask and in the substrate, the alignment being performed with the aid of an imaging system and a light beam with polarized light, wherein
a) a phase shift for the first diffraction orders (20) is undertaken in the beam path (9a, 9b),
b) higher diffraction orders (21) and unwanted light are filtered out after the phase shift, and
c) after the filtering out the light beams of first diffraction orders (20) are detected, and the result is evaluated for alignment purposes.

### Claim 2 (depends on 1)

The method as claimed in claim 1, wherein the phase shift is performed in the pupil plane (5) of an imaging system (3, 4).

### Claim 3 (depends on 1)

The method as claimed in claim 1, wherein a phase shift of λ/2 or odd multiples is undertaken.

### Claim 4 (depends on 1)

A device for carrying out the method as claimed in claim 1, having an optical alignment system for aligning a mask (1) with setting marks (12a, 12b) with respect to the setting marks (13a, 13b) of a substrate (2), having an imaging system (3, 4), having an illuminating device (8) which generates a light beam from polarized light either directly or via a polarization filter, having a detector (17) and having an evaluating device (18), wherein
a) a phase-shifting device (14) for the first diffraction orders (20) is arranged in the beam path (9a, 9b) of the light beam,
b) downstream of the phase shift (14) in the beam direction, a separating device (16) is arranged for separating the higher diffraction orders (21) and unwanted light from the first diffraction orders (20), and
c) downstream of the separating device (16) in the beam direction are arranged a detector (17) and an evaluating device (18) connected to the detector (17).

### Claim 5 (depends on 4)

The device as claimed in claim 4, wherein the phase-shifting device (14) is located in the pupil plane (5) of an imaging system, in particular of a projection lens (3, 4).

### Claim 6 (depends on 4)

The device as claimed in claim 4, wherein the phase-shifting device is a λ/2 plate (14).

### Claim 7 (depends on 4)

The device as claimed in claim 4, wherein the separating device is an analyzer (16) for polarized light.

### Claim 8 (depends on 4)

The device as claimed in claim 4, wherein the illuminating device has at least one laser (8) generating polarized light.

### Claim 9 (depends on 4)

The device as claimed in claim 4, wherein the mask pattern is part of a photolithographic mask (1) and the substrate is part of a wafer (2).