# US 6,294,016 B1 · Method for manufacturing p-type GaN based thin film using nitridation

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- Number: US 6,294,016 B1
- Document ID: US6294016B1
- Status: Granted
- Kind: B1
- Application number: 09/421,028
- Filed: 1999-10-20
- Granted: 2001-09-25
- Earliest claimed: 1999-10-20
- Assignees: Kwangju Institute of Science and Technology
- Inventors: Sang Woo Kim; Ji Myon Lee; Kwang Soon Ahn; Rae Man Park; Ja Soon Jang; Seong Ju Park
- Web page: https://patentgrep.com/patent/US6294016B1

## CPC

- C30B 25/02: Epitaxial-layer growth
- C30B 29/403: {AIII-nitrides}
- C30B 29/406: {Gallium nitride}
- H10H 20/01: Manufacture or treatment
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10P 95/904: {of Group III-V semiconductors}
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Disclosed is a method for manufacturing a high conductivity p-type GaN-based thin film superior in electrical and optical properties by use of nitridation and RTA (rapid thermal annealing) in combination. A GaN-based epitaxial layer is grown to a desired thickness while being doped with Mg dopant with a carrier gas of hydrogen by use of a MOCVD process. The film thus obtained is subjected to nitridation using nitrogen plasma and RTA in combination. The p-type GaN-based thin film exhibits high hole concentration as well as low resistivity, so that it can be used where high electrical, optical, thermal and structural properties are needed. The method finds application in the fabrication of blue/white LEDs, laser diodes and other electronic devices.

## Claims

### Claim 1

A method for manufacturing a high conductivity p-type GaN-based III-nitride thin film, comprising the steps of:
growing a GaN-based epitaxial layer while doping the epitaxial layer with magnesium with hydrogen serving as a carrier gas by the use of a metalorganic chemical vapor deposition system;
conducting a first rapid thermal anneal (RTA) in a nitrogen ambient;
subjecting the grown layer to nitridation and a second RTA (rapid thermal annealing) in combination.

### Claim 2

A method for manufacturing a high conductivity p-type GaN-based III-nitride thin film, comprising the steps of:
growing a GaN-based epitaxial layer while doping the epitaxial layer with magnesium with hydrogen serving as a carrier gas by the use of a metalorganic chemical vapor deposition system;
subjecting the grown layer to nitridation and RTA (rapid thermal annealing) in combination, wherein the nitridation is carried out at 10-1,100° C. for 1-120 min under 10 Torr or less, using nitrogen plasma with a nitrogen flow of 1-4,000 sccm.

### Claim 3 (depends on 1)

A method as set forth in claim 1, wherein the second RTA is carried out at 400-1,100° C. for 1 sec-60 min in a gas atmosphere selected from the group consisting of nitrogen, helium, neon and arson.

### Claim 4 (depends on 1)

A method as set forth in claim 1, wherein the p-type GaN-based III-nitride thin film is composed of GaN, AlGaN and InGaN.

### Claim 5

A method for manufacturing a high conductivity p-type GaN-based III-nitride thin film, comprising the steps of:
growing a GaN-based epitaxial layer while doping the epitaxial layer with magnesium with hydrogen serving as a carrier gas by the use of a metalorganic chemical vapor deposition system;
subjecting the grown layer to nitridation and RTA (rapid thermal annealing) in combination,
further comprising the step of immersing the p-type GaN-based III-nitride thin film in a mix solution of hydrochloric acid and nitric acid to remove native oxides prior to depositing a p-type electrode, said native oxides being formed, in abundance, on a surface of the thin film.

### Claim 6 (depends on 1)

The method of claim 1 wherein the GaN-based epitaxial layer is grown to a thickness of approximately 1.0 μm.