Photoelectric conversion device and photo cell
AssigneeFuji Photo Film Co., Ltd.
InventorShigeru Nakamura
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Abstract
A photoelectric conversion device comprising an electrically conductive substrate, a photosensitive semiconductor layer, a charge transporting layer, and a counter electrode (preferably a counter electrode having a porous electron-conducting layer), wherein an electrically insulating spacing layer is provided between the semiconductor layer and the counter electrode, and a photo cell having the device. High conversion efficiency is obtained without causing an internal shortage.
Claims15
A photoelectric conversion device comprising at least a photosensitive semiconductor layer, a charge transporting layer, and a counter electrode, wherein an electrically insulating spacing layer is provided between said semiconductor layer and said counter electrode, said spacing layer having a thickness of 0.05 to 5 μm and comprising a material having an electrical conductivity of 1×10−6 Siemens/cm or less.
A photo cell having a photoelectric device comprising at least a photosensitive semiconductor layer, a charge transporting layer, and a counter electrode, wherein an electrically insulating spacing is provided between said semiconductor layer and said counter electrode, said spacing layer having a thickness of 0.05 to 5 μm and comprising a material having an electrical conductivity of 1×10−6 Siemens/cm or less.
Dependencies are inferred from the claim text.