US 6,291,119 B1 · Method of compensating for pattern dimension variation caused by re-scattered electron beam in electron beam lithography and recording medium in which the method is recorded

Abstract

The present invention relates to electron beam lithography, and is directed to a method of compensating for pattern dimension variation caused by a re-scattered electron beam when an electron beam resist is exposed to the electron beam. The method of compensating for pattern dimension variation caused by a re-scattered electron beam comprises the steps of: dividing original exposure pattens into square sections; obtaining a dose of supplemental exposure to the re-scattered electron beam; and compensation-exposing the electron beam resist so that the supplemental exposure dose may be the same for all sections. According to the present invention, the pattern dimension variation can be compensated for a re-scattering effect of the electron beam, thereby uniformly forming a fine pattern width of a more highly-integrated circuit.

Claims12

Dependent claims

A method of compensating for pattern dimension variation caused by a re-scattered electron beam when an electron beam resist is exposed to the electron beam at predetermined exposure patterns, the method comprising:

dividing the predetermined exposure patterns into square sections;
determining a dose of supplemental exposure to the re-scattered electron beam when adjacent sections are exposed, for each section;
determining a compensation exposure dose for each section by deducting the supplemental exposure dose of each section from a predetermined reference value;
and
compensation-exposing the electron beam resist according to the compensation exposure dose of each section.

2 more elements

A recording medium recorded on which a program for obtaining compensation exposure data for compensating for pattern dimension variation caused by a re-scattered electron beam when an electron beam resist is exposed to the electron beam with predetermined exposure patterns, is recorded, the program comprising:

a program module for dividing the predetermined exposure pattens into square sections and determining a dose of supplemental exposure to the re-scattered electron beam when adjacent sections are exposed, for each section;
a program module for determining a compensation exposure dose for each section by deducting the supplemental exposure dose of each section from a predetermined reference value;
and
a program module for setting-up compensation exposure patterns for each section with predetermined compensation exposure patterns so as to expose an area proportional to the compensation exposure dose for each section.

1 more element

Dependencies are inferred from the claim text.

Method of compensating for pattern dimension variation caused by re-scattered electron beam in electron beam lithography and recording medium in which the method is recorded

Life of this patent

Method of compensating for pattern dimension variation caused by re-scattered electron beam in electron beam lithography and recording medium in which the method is recorded

Life of this patent

Abstract

Claims12