Method for electrolytically depositing copper on a semiconductor workpiece

A process for applying a metal structure to a workpiece comprising:

• providing a first electroplating bath including copper sulfate as a source of metal ions as a principal metal species to be deposited during subsequent electroplating, a complexing agent, and ethylene glycol;
• providing a workpiece on which one or more microelectronic devices are to be formed,
• exposing at least one surface of the workpiece to the first electroplating bath;
• providing electroplating power between the at least one surface of the workpiece and an anode disposed in electrical contact with the first electroplating bath to electroplate copper onto the at least one surface of the workpiece in an electrolytic first deposition process at a first deposition rate;
• and
• depositing additional copper onto the copper deposited in the first deposition process using a second deposition process at a second deposition rate that is higher than the first deposition rate.

A process for applying a metal structure to a workpiece comprising:

• providing a workpiece on which one or more microelectronic devices are to be formed;
• depositing a barrier layer on at least one surface of a workpiece;
• providing a first electroplating bath including copper sulfate as a source of principal metal species to be deposited during subsequent electroplating, ethylene glycol, a metal ion complexing agent, and an alkaline agent in an amount to adjust the pH of the first electroplating bath to a pH of at least 9.0;
• exposing the least one surface of the workpiece including the barrier layer to the first electroplating bath;
• providing electroplating power between the at least one surface of the workpiece and an anode disposed in electrical contact with the first electroplating bath to electroplate copper directly onto the barrier layer of the workpiece in an electrolytic first deposition process;
• and
• depositing additional copper onto the copper deposited in the first deposition process using a second deposition process at a second deposition rate that is higher than a rate at which copper is deposited in the first deposition process.

A process for applying a metal structure to a workpiece comprising:

• providing a first electroplating bath including copper sulfate as a source of metal ions as a principal metal species to be deposited during subsequent electroplating, a complexing agent, ethylene glycol, and an alkaline agent in an amount sufficient to raise the pH of the bath to at least 9.0;
• providing a workpiece on which one or more microelectronic devices are to be formed;
• exposing at least one surface of the workpiece to the first electroplating bath;
• providing electroplating power between the at least one surface of the workpiece and an anode disposed in electrical contact with the first electroplating bath to electroplate copper onto the at least one surface of the workpiece in an electrolytic first deposition process;
• and
• depositing additional copper onto the copper deposited in the first deposition process using a second deposition process that is different than the first electrolytic deposition process.