Bias circuit for read amplifier circuits for memories
AssigneeSTMicroelectronics S.r.l.
InventorsAntonino Conte, Maurizio Gaibotti, Tommaso Zerilli
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AssigneeSTMicroelectronics S.r.l.
InventorsAntonino Conte, Maurizio Gaibotti, Tommaso Zerilli
Estimating the term…
A bias circuit for read amplifier circuits for memories includes at least one first circuit branch formed by a first pair of MOS transistors connected between a supply voltage and ground. The first pair of MOS transistors includes a P-channel diode connected transistor and an N-channel transistor connected in series, with an enable transistor interposed therebetween. The first circuit branch drives a capacitive load for coupling to the supply voltage. The bias circuit further includes reference current amplifier circuit branches for amplifying a reference current which flows in the first circuit branch for charging the capacitive load. A circuit portion, which controls the charging current of the capacitive load, includes a feedback loop between the reference current amplifier circuit branches and the capacitive load.
A bias circuit for a sense amplifier circuit for a memory comprising:
A bias circuit for a sense amplifier circuit for a memory comprising:
A bias circuit according to claim 24, wherein said at least one first, second, third, fourth and fifth circuit branches each comprises a plurality of respective circuit branches, and wherein a number of the plurality of respective circuit branches is based upon speed and stability characteristics of the bias circuit.
A memory device comprising:
A method for biasing a sense amplifier circuit for a memory comprising:
Dependencies are inferred from the claim text.