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US 6,288,946 B1Granted
Method of erasing a flash memory device
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsSung Hoon Hong, Jae Chun An, Mun Hwa Lee, Soo Min Cho
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Abstract
There is disclosed a method of erasing a flash memory device. The present invention implements a dummy recovery operation after a recovery operation for recovering the threshold voltage of an over-erased memory cell is implemented. Therefore, it can reduce the flow of the leakage current through bit lines to thus improve the program characteristic of the device.
Claims4
A method of erasing a flash memory device, comprising:
- applying an erasure bias voltage to memory cells in a selected sector of said device and subsequently implementing an erasure verification operation for respective erased memory cells;
- implementing a recovery verification operation for discriminating any over-erased memory cell;
- implementing a recovery operation for recovering a threshold voltage associated with the erased memory cell;
- and
- implementing a dummy recovery operation for stably maintaining the threshold voltage of the erased memory cell.
2 more elements
Dependencies are inferred from the claim text.