Semiconductor device with catalyst addition and removal

A method of manufacturing a semiconductor device, said method comprising the steps of:

• preparing a crystalline semiconductor substrate;
• intentionally forming defects and distortions on a backside portion of the crystalline semiconductor substrate;
• introducing a metal element for promoting crystallization of semiconductor into the crystalline semiconductor substrate;
• heating the crystalline semiconductor substrate in an atmosphere including a halogen element;
• forming a crystalline semiconductor region using the metal element;
• forming an active layer using the crystalline semiconductor region,
• wherein the metal element is gettered into the backside portion of the crystalline semiconductor substrate (Embodiment 7).

A method of manufacturing a CMOS structure, said method comprising the steps of:

• preparing a crystalline semiconductor substrate;
• forming an oxide layer in the crystalline semiconductor substrate;
• introducing a metal element for promoting crystallization of semiconductor into the crystalline semiconductor substrate;
• heating the crystalline semiconductor substrate in an atmosphere including a halogen element;
• forming a first crystalline semiconductor region and a second crystalline semiconductor region using the metal element;
• forming a gate insulating layer on the first and second crystalline semiconductor regions;
• introducing an n-type impurity into the first crystalline semiconductor region to form a first active layer;
• introducing a p-type impurity into the second crystalline semiconductor region to form a second active layer;
• forming a first gate electrode over the first active layer with the gate insulating layer interposed therebetween;
• forming a second gate electrode over the second active layer with the gate insulating layer interposed therebetween.

A method of manufacturing a semiconductor device, said method comprising the steps of:

• preparing a crystalline semiconductor substrate;
• introducing oxygen ions into the crystalline semiconductor substrate;
• forming an oxide layer in the crystalline semiconductor substrate;
• introducing a metal element for promoting crystallization of semiconductor into the crystalline semiconductor substrate;
• heating the crystalline semiconductor substrate in an atmosphere including a halogen element;
• forming a crystalline semiconductor region on the oxide layer using the metal element;
• forming an active layer using the crystalline semiconductor region (Embodiment 10).

A method of manufacturing a semiconductor device, said method comprising the steps of:

• preparing a crystalline semiconductor substrate;
• introducing oxygen ions into the crystalline semiconductor substrate;
• forming an oxide layer in the crystalline semiconductor substrate;
• introducing a metal element for promoting crystallization of semiconductor into the crystalline semiconductor substrate;
• heating the crystalline semiconductor substrate in an atmosphere including a halogen element;
• forming a crystalline semiconductor region on the oxide layer using the metal element;
• forming a gate insulating layer on the crystalline semiconductor region;
• forming a gate electrode over the crystalline semiconductor region with the gate insulating layer interposed therebetween;
• introducing an impurity into the crystalline semiconductor region to form a pair of low concentration impurity regions using the gate electrode as a first mask;
• forming sidewall spacers adjacent to the gate electrode;
• introducing the impurity into the crystalline semiconductor region to form a source region and a drain region using the gate electrode and the sidewall spacers as a second mask (Embodiment 14).

A method of manufacturing a CMOS structure, said method comprising the steps of:

• preparing a crystalline semiconductor substrate;
• intentionally forming defects and distortions on a backside portion of the crystalline semiconductor substrate;
• heating the crystalline semiconductor substrate in an atmosphere including a halogen element;
• forming a first crystalline semiconductor region and a second crystalline semiconductor region;
• forming a gate insulating layer on the first and second crystalline semiconductor regions;
• introducing an n-type impurity into the first crystalline semiconductor region to form a first active layer;
• introducing a p-type impurity into the second crystalline semiconductor region to form a second active layer;
• forming a first gate electrode over the first active layer with the gate insulating layer interposed therebetween;
• forming a second gate electrode over the second active layer with the gate insulating layer interposed therebetween.

A method of manufacturing a semiconductor device, said method comprising the steps of:

• preparing a crystalline semiconductor substrate;
• introducing oxygen ions into the crystalline semiconductor substrate;
• forming an oxide layer in the crystalline semiconductor substrate;
• forming a crystalline semiconductor region on the oxide layer;
• forming a gate insulating layer on the crystalline semiconductor region;
• forming a gate electrode over the crystalline semiconductor region with the gate insulating layer interposed therebetween;
• introducing an impurity into the crystalline semiconductor region to form a pair of low concentration impurity regions using the gate electrode as a first mask;
• forming sidewall spacers adjacent to the gate electrode;
• introducing the impurity into the crystalline semiconductor region to form a source region and a drain region using the gate electrode and the sidewall spacers as a second mask.