Field modulated vertical cavity surface-emitting laser with internal optical pumping
AssigneeMitel Semiconductor Limited
InventorsAnna Kullander-Sjoberg, Michael Widman
Life of this patent
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Abstract
A vertical cavity surface emitting laser diode (VCSEL), includes top and bottom electrically non-conductive mirrors defining a first laser cavity containing a laser medium and designed to resonate at a first wavelength. A second laser cavity is designed to resonate at a second wavelength less than the first wavelength. The second laser cavity is optically coupled to the first laser cavity so as to pump the laser medium and create laser action in the first laser cavity. The second laser cavity is normally provided by a VCSEL stacked below the first laser cavity.
Claims12
A vertical cavity surface emitting laser (VCSEL) diode structure, comprising top and bottom mirrors defining a first laser cavity containing a laser medium and designed to resonate at a first wavelength, at least one of said mirrors being electrically non-conductive;
- and a second laser cavity designed to resonate at a second wavelength less than said first wavelength, said second laser cavity being optically coupled to said first laser cavity so as to optically pump said laser medium and create laser action in said first laser cavity, said top mirror of said first laser cavity comprising a stack of dielectric material, said dielectric material being selected from the group consisting of silicon dioxide and silicon nitride.
A laser (VCSEL) diode structure, comprising top and bottom mirrors defining a first laser cavity containing a laser medium and designed to resonate at a first wavelength, at least one of said mirrors being electrically non-conductive;
- and a second laser cavity designed to resonate at a second wavelength less than said first wavelength, said second laser cavity being optically coupled to said first laser cavity so as to optically pump said laser medium and create laser action in said first laser cavity, said top mirror of said first laser cavity comprising a stack of dielectric material, wherein said laser medium consists of indium gallium arsenide phosphide quantum dots or an alloy combination thereof embedded in GaAlAs or GaAs or that emits at 1300 nm and said quantum dots are grown lattice mismatched to the material forming the bottom mirror.
Dependencies are inferred from the claim text.