MOCVD growth of InGaN quantum well laser structures on a grooved lower waveguiding layer
AssigneeXerox Corporation
InventorsLinda T. Romano, Daniel Hofstetter, Thomas L. Paoli
Life of this patent
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Abstract
Group III-V nitride semiconductors are used as light emitters for optoelectronic devices. To provide the desired range of bandgaps and band offsets in heterostructure devices, InGaN layers have to be grown. InGaN layers are difficult to grow because poor lattice mismatch between group III-V nitride alloys. Thus, a plurality of gratings or grooves are formed in the group III-V nitride layer in order to relieve strain between the group III-V nitride layer and the active region. The plurality of gratings allows segregation of In in a manner that optimizes the wavelength of light produced.
Claims42
A semiconductor structure, comprising:
- a buffer layer;
- a lower cladding layer formed over the buffer layer;
- a lower waveguiding layer formed over the lower cladding layer;
- an active layer formed over the lower waveguiding layer;
- an upper waveguiding layer formed over the active layer;
- and
- a plurality of grooves providing a corrugated interface formed under the active layer.
A method of forming a semiconductor structure, comprising:
- forming a buffer layer;
- forming a lower cladding layer over the buffer layer;
- forming a lower waveguiding layer over the lower cladding layer;
- forming an active layer over the lower waveguiding layer;
- forming an upper waveguiding layer over the active layer;
- and
- forming a plurality of grooves providing a corrugated interface under the active layer.
A semiconductor structure, comprising:
- a buffer layer;
- a lower cladding layer formed over the buffer layer;
- a lower waveguiding layer formed over the lower cladding layer;
- an active layer comprising InGaN formed over the lower waveguiding layer;
- an upper waveguiding layer formed over the active layer;
- a plurality of grooves providing a corrugated interface formed between at least any two adjacent layers and under the active layer;
- and
- In-rich regions on portions of the grooves.
A semiconductor structure, comprising:
- a nucleation layer;
- a buffer layer formed over the nucleation layer;
- a lower cladding layer formed over the buffer layer;
- a lower waveguiding layer formed over the lower cladding layer;
- an active layer formed over the lower waveguiding layer;
- an upper waveguiding layer formed over the active layer;
- and
- a plurality of grooves providing a corrugated interface formed between at least any two adjacent layers and under the active layer.
A semiconductor structure formed over a substrate, comprising:
- a cladding layer formed over the substrate;
- a lower waveguiding layer formed over the cladding layer;
- an active layer formed over the lower waveguiding layer;
- an upper waveguiding layer formed over the active layer;
- and
- a plurality of grooves providing a corrugated interface formed between the substrate and the active layer.
Dependencies are inferred from the claim text.