Precision programming of nonvolatile memory cells
AssigneeSilicon Storage Technology, Inc.
InventorsSakhawat M. Khan, George J. Korsh
Life of this patent
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Abstract
An integrated circuit memory system and method for precision hot carrier injection programming of single or plurality of nonvolatile memory cells is described. Each program cycle is followed by a verify cycle. Precision programming is achieved by incrementally changing a programming current pulse flowing between the source and drain in the memory cell during successive program cycles and a constant current during successive verify cycles. Current control and voltage mode sensing circuitry reduces circuit complexity, reduces programming cell current, lowers power dissipation, and enables page mode operation. Precision programming is useful for multilevel digital and analog information storage.
Claims42
An integrated circuit memory system comprising:
- a control block controlling operations of said integrated circuit memory system;
- a plurality of memory cells, each memory cell comprising:
- a source, drain, control gate and floating gate, said floating gate capable of storing electric charge, said memory cells programmable by hot carrier injection of electric charge to said floating gate corresponding to input signals to said integrated circuit memory system;
- circuit means, responsive to said control block, for applying a first set of preselected voltages to a source, drain and control gate of a selected memory cell in a first set of timed relationships and for controlling a programming current independently of said input signals, said programming current flowing between said source and drain during programming of said selected memory cell so that an amount of electric charge stored on a floating gate of said selected memory cell is precisely controlled.
An integrated circuit memory system comprising:
- a system control block;
- an array of memory cells, each memory cell having a first terminal, a second terminal, a control gate and a floating gate, said floating gate capable of storing electric charge, said memory cells programmable by hot carrier injection of electric charge to said floating gate;
- a first control block connected to a first terminal of a memory cell selected for programming;
- a second control block connected to a second terminal of said memory cell;
- and
- a third control block connected to a control gate of said memory cell;
- wherein said first, second and third control blocks, responsive to said system control block, apply preselected voltages to said first terminal, second terminal and control gate of said selected memory cell in a first set of timed relationships and cooperatively control current flowing between said first terminal and said second terminal during programming operation of said selected memory cell so that an amount of electric charge stored on said floating gate is precisely controlled.
In an integrated circuit memory system having a plurality of memory cells, each memory cell comprising a source, drain, control gate and floating gate, said floating gate capable of storing electric charge, said memory cells programmable by hot carrier injection corresponding to input signals to said integrated circuit memory system, a method for programming said memory cells comprising:
- applying voltages to said source, drain, and control gate of a selected memory cell in a first set of timed relationships and controlling a current independently of said input signals, said current flowing between said source and drain of a memory cell so that an amount of electric charge stored on said floating gate of said selected memory cell is precisely controlled.
In an integrated memory system having an array of memory cells, each memory cell comprising a first terminal, a second terminal, a control gate and a floating gate, said floating gate capable of storing electric charge, said memory cells programmable by hot carrier injection corresponding to input signals to said integrated circuit memory system, a method for programming a selected memory cell comprising:
- applying erase voltages to said first terminal, said second terminal, and said control gate of said selected memory cell so that electric charge is removed from said floating gate to erase said selected memory cell;
- applying preselected program voltages to said first terminal, second terminal, and control gate in a first set of timed relationships, and controlling the current flowing between said first terminal and said second terminal of said selected memory cell independently of any input signal voltages so that an amount of electric charge stored on said floating gate is precisely controlled to program said selected memory cell;
- applying program verify voltages to said first terminal, second terminal and control gate in a second set of timed relationships, providing a constant current flowing between said first terminal and second terminal of said selected memory cell, and comparing a voltage at said second terminal of said selected memory cell with respect to a program reference voltage to verify said amount of charge stored in floating gate of said selected memory cell;
- and
- repeating said program voltages and program verify voltages applying steps until a program verify voltages applying step verifies that said selected memory cell is programmed.
Dependencies are inferred from the claim text.