Two-dimensional resonant tunneling diode memory system
AssigneeEpitaxial Technologies
InventorHung Chang Lin
Life of this patent
Estimating the term…
Abstract
A two-dimensional memory comprises a matrix of multi-valued resonant tunneling diodes (RTD). Each memory cell has two series RTDs with hysteretic folding V-I characteristics. The memory state is determined by the node voltage between the two RTDs and the series current. Each memory cell has two terminals connected to two bit lines through word line switches. The two bit lines are fed with two sets of multi-valued data and are written into the cell by two consecutive pulses to set the operating point. The two sets of multi-valued data are converted by two D/A converters from two sub-words of the binary digital word. The memory state is read by the sensing the voltages at the two terminals, or voltage at one terminal and the current through the other terminal.
Claims18
A multiple-valued memory system using a two dimensional memory cells each with a left (L)-terminal and a right (R)-terminal wherein the multiple-valued memory state is determined by the combination of the multiple values from the L-terminal and the R-terminal, comprising:
- a matrix of said memory cells,
- a first bank of first word line switches each connected to said L-terminal;
- a second bank of second word line switches each connected to said R-terminal;
- a left bit line switch connected to said first bank of said first word line switches;
- a right bit line switch connected to said second bank of second word line switches;
- a first set of multiple-valued data fed to said left bit line;
- a second set of multiple-valued data fed to said right bit line;
- and
- a left N-bit digital-to-analog converter (DAC) to provide left multiple-valued data sub-word for said left bit line, and a right N-bit DAC to provide right multiple-valued data sub-word for said right bit line during writing said memory.
The multiple-valued memory system as described in claim said memory state is read by the voltage at the left terminal and voltage at the right terminal.
Dependencies are inferred from the claim text.