MRAM having semiconductor device integrated therein

A magnetic memory cell comprising:

• a first ferromagnetic material;
• a second ferromagnetic material;
• a semiconductor material positioned between the first and second ferromagnetic materials, the semiconductor layer characterized as a charge transport layer for producing a magnetoresistive signal;
• a first bit line positioned near the first ferromagnetic material and in electrical contact therewith;
• a digit line positioned near the second ferromagnetic material and in electrical contact therewith.

A magnetic memory comprising:

• a first electrically conductive portion;
• a first layer of ferromagnetic material in electrical contact with the first electrically conductive portion;
• a second layer of ferromagnetic material;
• a layer of semiconductor material positioned between the first and second layers of ferromagnetic material, the semiconductor layer characterized as a charge transport layer for producing a magnetoresistive signal;
• a second electrically conductive portion positioned in electrical contact with the second layer of ferromagnetic material, wherein the first layer of ferromagnetic material, the layer of semiconductor material, and the second layer of ferromagnetic material form a magnetic memory cell with the first and second electrically conductive portions forming a sense line;
• and
• an electrically conductive digit line positioned adjacent the magnetic memory cell so as to provide a magnetic field, when the digit line is activated, to at least partially switch magnetic vectors on one of the first and second layers of ferromagnetic material from a first direction along a length of the one to a second, substantially opposite direction, along the length of the one.