Holographic diffuser
AssigneeIndustrial Technology Research Institute
InventorsWei-Chung Chao, Chung-Jung Kuo, Ching-Yi Wu
Life of this patent
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Abstract
Method for the preparation of holographic diffusers where the holographic diffuser is designed through iterative calculations according to the Fraunhofer theory of diffraction and some constrain conditions. In the iterative calculation some constrain conditions that can change the magnitude of the light passing through the diffuser are used to design the diffuser. A novel iterative calculation is disclosed such that uniformed mixing of colors and high light utilization efficiency of the diffuser may be provided.
Claims5
A method for the preparation of holographic diffusers applicable to light source with multiple wave lengths, comprising the following steps:
- preparing a substrate made of a plurality of units;
- determining a thickness of the holographic diffuser, a unit area of said holographic diffuser, and sizes of said units;
- calculating etching depths according to phase distribution matrices Φn of light having wavelengths λn passing through said diffuser by:
- (a) using a random number generator to generate initial etching depths do and amplitude values A1 for optical field function Ψ1=A1*exp(iφ1) in the spatial frequency domain;
- (b) calculating a phase distribution matrix φ1 in the spatial frequency domain from the initial etching depths to obtain an optical field function Ψ1=A1*exp(iφ1) in the spatial frequency domain;
- (c) performing an inverse Fourier transform on optical field function Ψ1 to obtain the optical field a1*exp(iΦ1) and the phase distribution matrix Φ1 in the spatial domain for a first wavelength λ1, to obtain adjusted etching depths;
- (d) using the phase distribution matrix Φ1 and the adjusted etching depths, to calculate a new phase distribution matrix Φ2 at a second wavelength λ2 in the spatial domain;
- (e) obtaining a second optical field in the spatial domain a1*exp (iΦ2), performing a Fourier transform on said second optical field to obtain an optical field function Ψ2=A2*exp(iφ2) for wavelength λ2 in the spatial frequency domain;
- (f) adjusting amplitude coefficients A2 of optical field function Ψ2 to permit a desired amplitude of light having wavelength λ2 to pass through said diffuser and therefore provide a desired mixing effect, thereby obtaining an adjusted amplitude A2′ and an amplitude adjusted optical field function Ψ2′;
- (g) performing an inverse Fourier transform of the amplitude-adjusted optical field function Ψ2′ for wavelength λ2 to obtain the optical field a2*exp(iΦ2′) and an adjusted phase distribution matrix Φ2′ in the spatial domain to obtain a new set of adjusted etching depths;
- (h) using the phase distribution matrix Φ2′ and the new set of adjusted etching depths, to calculate a new phase distribution matrix Φ3 at a third wavelength λ3 in the spatial domain;
- (i) obtaining a third optical field in the spatial domain a2*exp (iΦ3), performing a Fourier transform on said third optical field to obtain an optical field function Ψ3=A3*exp(iφ3) for the wavelength λ3 in the spatial frequency domain;
- (j) adjusting amplitude coefficients of A3 of optical field function Ψ3 to permit a desired amplitude of light having wavelength λ3 to pass through said diffuser and therefore provide a desired mixing effect, thereby obtaining an adjusted amplitude A3′ and an amplitude adjusted optical field function Ψ3′;
- (k) performing an inverse Fourier transform on amplitude-adjusted optical field function Ψ3′ for wavelength λ3 to obtain the optical field a3*exp(iΦ3′) in the spatial domain;
- (l) repeating steps (h)-(k) for wavelengths λ4 to λn where n is the number of wavelengths to be diffused by said diffuser;
- (m) repeating steps (h)-(k) for wavelengths λn to λ1 to form an iterative operation loop and obtain a set of final adjusted depths based on the final adjusted phase distribution matrix in the spatial domain;
- determining patterns of masks according to the final adjusted depths di so obtained;
- preparing masks according to patterns so determined;
- and etching said substrate with said masks.
Dependencies are inferred from the claim text.