High-frequency semiconductor device having microwave transmission line being formed by a gate electrode source electrode and a dielectric layer in between

A high-frequency semiconductor device, comprising:

• at least one intrinsic device section disposed on a semiconductor substrate;
• a source electrode and a drain electrode disposed in said intrinsic device section with a gate electrode therebetween;
• said source electrode covers the major portion of said semiconductor substrate;
• a first micro-wave transmission line is formed by said gate electrode, said source electrode, and a first dielectric layer therebetween, said first dielectric layer having a dielectric constant greater than one and being disposed on said source electrode, said gate electrode being disposed on said first dielectric layer;
• a second micro-wave transmission line is formed by said drain electrode, said source electrode, and a second dielectric layer therebetween, said second dielectric layer having a dielectric constant greater than one and being disposed on said source electrode, said drain electrode being disposed on said second dielectric layer;
• and
• both of the transmission lines being directly connected with said intrinsic device section.

A high-frequency semiconductor device, comprising:

• at least one intrinsic device section disposed on a semiconductor substrate;
• a source electrode and a drain electrode disposed in said intrinsic device section with a gate electrode therebetween;
• said source electrode covering a major portion of said semiconductor substrate;
• a first microwave transmission line formed by an electrode section conductively connected to said gate electrode, said source electrode, and a first dielectric layer therebetween, said first dielectric layer having a dielectric constant greater than one and being disposed on said source electrode, said electrode section connected to said gate electrode being disposed on said first dielectric layer;
• a second microwave transmission line formed by an electrode section conductively connected to said drain electrode, said source electrode, and a second dielectric layer therebetween, said second dielectric layer having a dielectric constant greater than one and being disposed on said source electrode, said electrode section connected to said drain electrode being disposed on said second dielectric layer;
• and
• both of the transmission lines being directly connected with said intrinsic device section.

A high-frequency semiconductor device, comprising:

• at least two intrinsic device sections disposed on a semiconductor substrate, each of said intrinsic device sections having;
• a source electrode and a drain electrode disposed in said intrinsic device section with a gate electrode therebetween;
• wherein a first microwave-transmission line electrically being connected to said gate electrode and being electrically connected to said source electrode, said first transmission line being formed by an electrode connected to said gate electrode, an electrode connected to said source electrode, and a first dielectric layer therebetween, said first dielectric layer having a dielectric constant greater than one, and wherein a second microwave transmission line being electrically connected to said drain electrode and being electrically connected to said source electrode, said second transmission line being formed by an electrode connected to said drain electrode, an electrode connected to said source electrode, and a second dielectric layer therebetween, said second dielectric layer having a dielectric constant greater than one;
• a first pair of slot lines, each of said first pair of slot lines being electromagnetically coupled to said respective first microwave transmission lines;
• a second pair of slot lines, each of said second pair of slot lines being electromagnetically coupled to said respective second microwave transmission lines;
• a third slot line electromagnetically coupled to said first pair of slot lines;
• a fourth slot line electromagnetically coupled to said second pair of slot lines;
• and
• both of the transmission lines being directly connected with said intrinsic device section.

A high-frequency semiconductor device, comprising:

• at least one intrinsic device section disposed on a semiconductor substrate;
• a source electrode and a drain electrode disposed in said intrinsic device section with a gate electrode therebetween;
• a first micro-wave transmission line, said first transmission line being formed by a first electrode connected to said gate electrode a second electrode, connected to said source electrode and a first dielectric layer therebetween, said first dielectric layer having a dielectric constant greater than one and being disposed on said second electrode said first electrode, being disposed on said first dielectric layer;
• and
• a second micro-wave transmission line, said second transmission line being formed by a third electrode connected to said drain electrode, a fourth electrode connected to said source electrode, and a second dielectric layer therebetween, said second dielectric layer having a dielectric constant greater than one and being disposed on said fourth electrode, said third electrode being disposed on said second dielectric layer, wherein the width of the respective dielectric layers are substantially same as the width of the electrodes on the respective dielectric layers.

A high-frequency semiconductor device, comprising:

• at least one intrinsic device section disposed on a semiconductor substrate;
• a source electrode and a drain electrode disposed in said intrinsic device section with a gate electrode therebetween;
• a first micro-wave transmission line, said first transmission line being formed by a first electrode connected to said gate electrode, a second electrode connected to said source electrode and a first dielectric layer therebetween, said first dielectric layer having a dielectric constant greater than one and being disposed on said second electrode, said first electrode being disposed on said first dielectric layer;
• and
• a second micro-wave transmission line, said second transmission line being formed by a third electrode connected to said drain electrode, a fourth electrode connected to said source electrode, and a second dielectric layer therebetween, said second dielectric layer having a dielectric constant greater than one and being disposed on said fourth electrode, said third electrode being disposed on said second dielectric layer, wherein side surfaces of said respective dielectric layers being substantially perpendicular to the major surface of said substrate.