Ion implanter with multi-level vacuum
AssigneeAdvanced Micro Devices, Inc.
InventorsChristopher H. Lansford, Jeremy S. Lansford
Life of this patent
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AssigneeAdvanced Micro Devices, Inc.
InventorsChristopher H. Lansford, Jeremy S. Lansford
Estimating the term…
Various embodiments of an ion implantation apparatus are provided. In one aspect, an apparatus for implanting a workpiece with ions is provided that includes a housing enclosing a first chamber. A source of accelerated ions is provided for directing a beam of ions through the first chamber toward the workpiece. A second chamber is provided for holding the workpiece along with a plurality of longitudinally spaced chambers that are defined by the housing and a plurality of longitudinally spaced bulkheads. Each of the bulkheads has an aperture enabling fluid communication between the plurality of longitudinally spaced chambers and the passage of the beam of ions. A source of gas is coupled to the second chamber. A pumping system is provided for evacuating the first chamber, the second chamber and the plurality of longitudinally spaced chambers. The pumping system and the plurality of longitudinally spaced chambers provide an increase in pressure between the first chamber and the second chamber. The higher pressure level in the second chamber enables the gas to be present in the second chamber in sufficient quantities to impact the workpiece and neutralize charge building thereon. Charge buildup during implantation is reduced.
An apparatus for implanting a workpiece with ions, comprising:
An apparatus for implanting a workpiece with ions, comprising:
An apparatus for implanting a workpiece with ions, comprising:
Dependencies are inferred from the claim text.