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AssigneeMatsushita Electric Works, Ltd.
InventorsTakashi Hatai, Takuya Komoda, Yoshiaki Honda, Koichi Aizawa, Yoshifumi Watabe, Tsutomu Ichihara, Yukihiro Kondo, Nobuyoshi Koshida
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A field emission type electron source 10 is provided with an n-type silicon substrate 1, a strong field drift layer 6 formed on the n-type silicon substrate 1 directly or inserting a polycrystalline silicon layer 3 therebetween, and an electrically conductive thin film 7, which is a thin gold film, formed on the strong field drift layer 6. Further, an ohmic electrode 2 is provided on the back surface of the n-type silicon substrate 1. Hereupon, electrons, which are injected from the n-type silicon substrate 1 into the strong field drift layer 6, drift in the strong field drift layer 6 toward the surface of the layer, and then pass through the electrically conductive thin film 7 to be emitted outward. The strong field drift layer 6 is formed by making the polycrystalline silicon 3 formed on the n-type silicon substrate 1 porous by means of an anodic oxidation, and further oxidizing it using dilute nitric acid or the like.
A field emission-type electron source comprising an electrically conductive substrate, a strong field drift layer formed on a surface of the electrically conductive substrate and an electrically conductive thin film formed on the strong field drift layer, wherein electrons, which are injected into the electrically conductive substrate, drift in the strong field drift layer to be emitted outward through the electrically conductive thin film by applying voltage between the electrically conductive thin film and the electrically conductive substrate in such a manner that the electrically conductive thin film acts as a positive electrode against the electrically conductive substrate, wherein
A method of manufacturing a field emission-type electron source including an electrically conductive substrate, a strong field drift layer formed on a surface of the electrically conductive substrate, which includes fine crystalline silicon layers of nano structure and silicon oxide films formed on surfaces of the fine crystalline silicon layers, each of the films having a thickness smaller than a diameter of crystal particles of the fine crystalline silicon layers, and an electrically conductive thin film formed on the strong field drift layer, wherein electrons, which are injected into the electrically conductive substrate, drift in the strong field drift layer to be emitted outward through the electrically conductive thin film by applying voltage between the electrically conductive thin film and the electrically conductive substrate in such a manner that the electrically conductive thin film acts as a positive electrode against the electrically conductive substrate, the method comprising a main oxidation which comprises forming a strong field drift layer by oxidizing a porous semiconductor layer at relatively lower temperature.
Dependencies are inferred from the claim text.