Semiconductor device and mounting structure of a semiconductor device

A mounting structure for mounting a semiconductor device having an electrode on a mounting substrate having a conductive pad, said structure comprising:

• a metallic bump electrically connecting said electrode of the semiconductor device to said conductive pad;
• a first eutectic solder for soldering between said metallic bump and said electrode of the semiconductor device;
• a second eutectic solder for soldering between said metallic bump and said conductive pad of the substrate;
• wherein a melting point of said metallic bump is higher than those of said first and second eutectic solders, a resistance to fatigue of said second eutectic solder is higher than that of said first eutectic solder, said second eutectic colder is composed mainly of a Sn component and a Pb component, and also composed of at least two of an In component, a Sb component, an Ag component, and a Cu component.

A semiconductor device comprising:

• a semiconductor element having an electrode forming surface on which a first electrode terminal and an insulating protective film are formed;
• a wiring pattern formed on said protective film so as to electrically connect to said first electrode terminal;
• a metallic bump electrically connected to said wiring pattern by means of a second electrode terminal;
• an eutectic solder for soldering between said metallic bump and said second electrode terminal, said eutectic solder having a high resistance to fatigue and being composed of an Sn component of 63% by mass, a Pb component of 34.3% by mass, an In component of 1% by mass, a Sb component of 0.7% by mass, and an Ag component of 1% by mass;
• and
• a melting point of said metallic bump being higher than that of said eutectic solder.

A semiconductor device comprising:

• a semiconductor element having an electrode;
• a metallic bump electrically connected to said electrode;
• an eutectic solder for soldering between said metallic bump and said electrode, said eutectic solder has a high resistance to fatigue and composed mainly of a Sn component and a Pb component, and also composed of at least two of an In component, a Sb component, an Ag component, and a Cu component;
• and
• a melting point of said metallic bump being higher than that of said eutectic solder.

A mounting structure for mounting a semiconductor device having an electrode on a mounting substrate having a conductive pad, said structure comprising:

• a metallic bump electrically connecting said electrode of the semiconductor device to said conductive pad;
• a first eutectic solder for soldering between said metallic bump and said electrode of the semiconductor device;
• and
• a second eutectic solder for soldering between said metallic bump and said conductive pad of the substrate;
• wherein said metallic bump is a high-melting point solder, Cu or Ni, a melting point of said metallic bump is higher than those of said first and second eutectic solders, and a resistance to fatigue of said first eutectic solder is higher than that of said second euetectic solder.

A mounting structure for mounting a semiconductor device having an electrode on a mounting substrate having a conductive pad, said structure comprising:

• a metallic bump electrically connecting said electrode of the semiconductor device to said conductive pad;
• a first eutectic solder for soldering between said metallic bump and said electrode of the semiconductor device;
• and
• a second eutectic solder for soldering between said metallic bump and said conductive pad of the substrate;
• wherein said metallic bump being a high-melting point solder, Cu or Ni, and a melting point of said metallic bump being higher than those of said first and second eutectic solders, and a resistance to fatigue of said second eutectic solder is higher than that of said first eutectic solder.

A semiconductor device comprising:

• a semiconductor element having an electrode forming surface on which a first electrode terminal and an insulating protective film are formed;
• a wiring pattern formed on said protective film so as to electrically connect to said first electrode terminal;
• a metallic bump electrically connected to said wiring pattern by means of a second electrode terminal;
• an eutectic solder for soldering between said metallic bump and said second electrode terminal, said eutectic solder having a high resistance to fatigue and being mainly composed of a Sn component and a Pb component, and also composed of at least two of an In component, a Sb component, an Ag component, and a Cu component;
• and
• a melting point of said metallic bump being higher than that of said eutectic solder.