Semiconductor device containing a porous structure and method of manufacturing the same

A semiconductor device, comprising:

• a first semiconductor region of a first conductivity type;
• a first porous layer formed inside said first semiconductor region as a buried layer;
• and
• a source/drain region of a second conductivity type different from said first conductivity type, selectively formed in an upper surface of said first semiconductor region,
• wherein a depletion layer created in a junction between said first semiconductor region and a bottom surface of said source/drain region can exist in said first porous layer.

A method of manufacturing a semiconductor device, comprising the steps of:

• (a) forming a first semiconductor region of a first conductivity type in which a first porous layer is formed as a buried layer;
• and
• (b) selectively forming a source/drain region of a second conductivity type different from said first conductivity type in an upper surface of said first semiconductor region,
• wherein a depletion layer created in a junction between said first semiconductor region and a bottom surface of said source/drain region can exist in said first porous layer.