Substrate-on-insulator semiconductor device with noise decoupling

A communication apparatus including at least one integrated circuit, said integrated circuit comprising:

• a substrate-on-insulator type semiconductor substrate having a lower portion on top of which there is an upper insulating layer,
• wherein a first semiconductor block and a second semiconductor block are produced in the upper insulating layer, the first semiconductor block defining a first capacitor with the lower portion of the substrate and the second semiconductor block defining a second capacitor with the lower portion of the substrate,
• decoupling means are arranged in the upper insulating layer between the first and second semiconductor blocks, the decoupling means including at least one semiconductor well that defines a decoupling capacitor with the lower portion of the substrate, and
• the capacitance of the decoupling capacitor is higher than the capacitance of each of the first and second capacitors.

A method of providing noise decoupling in an integrated circuit having a substrate-on-insulator type semiconductor substrate with a lower portion on top of which there is an upper insulating layer, said method comprising the steps of:

• producing a first semiconductor block and a second semiconductor block in the upper insulating layer, the first semiconductor block defining a first capacitor with the lower portion of the substrate and the second semiconductor block defining a second capacitor with the lower portion of the substrate;
• and
• producing decoupling means in the upper insulating layer between the first and second semiconductor blocks, the decoupling means including at least one semiconductor well that defines a decoupling capacitor with the lower portion of the substrate,
• wherein the capacitance of the decoupling capacitor is higher than the capacitance of each of the first and second capacitors.