Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device

A memory device comprising:

• a conduction region made of a polycrystalline semiconductor;
• a first impurity region adjacent to the conduction region;
• a second impurity region apart from the first impurity region and adjacent to the conduction region;
• a storage region having a plurality of dispersed particulate, for storing charges moved from the conduction region;
• a tunnel insulating film between the storage region and the conduction region, through which charges can pass;
• a control electrode for controlling each of a charge quantity of the storage region and conductivity of the conduction region;
• a control insulating film between the control electrode and the storage region;
• and
• a number of the particulate in the storage region is at least five.

A memory device comprising:

• a conduction region made of a semiconductor;
• a first impurity region adjacent to the conduction region;
• a second impurity region apart from the first impurity region and adjacent to the conduction region;
• a storage region having a plurality of dispersed particulate, for storing charges moved from the conduction region;
• a tunnel insulating film between the storage region and the conduction region, through which charges can pass;
• a control electrode for controlling each of a charge quantity of the storage region and conductivity of the conduction region;
• and
• a control insulating film between the control electrode and the storage region,
• the conduction region being formed by a polysilicon film having a surface roughness of 0.1 nm to 100 nm and a number of particulate in the storage region being larger than a number of crystal grains in the conduction region.

An integrated circuit in which a plurality of memory device are integrated, each of the memory device comprising:

• a conduction region made of a semiconductor;
• a source region adjacent to the conduction region;
• a drain region apart from the source region and adjacent to the conduction region;
• a storage region having a plurality of dispersed particulate, for storing charges moved from the conduction region;
• a tunnel insulating film between the storage region and the conduction region, through which charges can be moved;
• a control electrode for controlling a charge quantity of the storage region and the conductivity of the conduction region;
• and a control insulating film between the control electrode and the storage region, the film having a structure such that a surface density of the particulate in the storage region is higher than a surface density of structural holes that occur in the tunnel insulating film;
• and
• the control electrode of each of the memory device connected to a word line, and a source-drain path of each memory device connected between a bit line and a source line.

A method of manufacturing a memory device, comprising:

• forming a conduction region by a semiconductor film on a substrate made of an insulating material;
• forming a tunnel insulating film on the conduction region;
• forming a storage region having a plurality of particulates dispersed on the tunnel insulating film, with a surface density of the particulates being higher than a surface of structural holes in the tunnel insulating film;
• forming a control insulating film on the storage region;
• forming a control electrode on the control insulating film;
• and
• forming a first impurity region adjacent to the conduction region and a second impurity region apart from the first impurity region and adjacent to the conduction region.

A method of manufacturing a memory device, comprising:

• forming a conduction region made by a polycrystalline semiconductor film on a substrate made of an insulating material;
• forming a tunnel insulating film on the conduction region;
• forming a storage region having at least five particulate dispersed on the tunnel insulating film;
• forming a control insulating film on the storage region;
• forming a control electrode on the control insulating film;
• and
• forming a first impurity region adjacent to the conduction region and a second impurity region apart from the first impurity region and adjacent to the conduction region.

A method of manufacturing a memory device, comprising:

• forming a conduction region, made by a polysilicon film whose surface roughness is in a range of 0.1 nm to 100 nm, on a substrate made of an insulating material;
• forming a tunnel insulating film on the conduction region;
• forming a storage region having dispersed particulate, a number of which is larger than a number of crystal grains in the conduction region, on the tunnel insulating film;
• forming a control insulating film on the storage region;
• forming a control electrode on the control insulating film;
• and
• forming a first impurity region adjacent to the conduction region and a second impurity region apart from the first impurity region and adjacent to the conduction region.

A method of manufacturing a memory device, comprising:

• forming a control electrode on a substrate made of an insulating material;
• forming a control insulating film on the control electrode;
• forming a storage region having a plurality of dispersed particulate on the control insulating film, with a surface density of the particulate being higher than a surface density of structural holes in the tunnel insulating film;
• forming a tunnel insulating film on the storage region;
• forming a conduction region made of a semiconductor on the tunnel insulating film;
• and
• forming a first impurity region adjacent to the conduction region and a second impurity region apart from the first impurity region and adjacent to the conduction region.

A method of manufacturing a memory device, comprising:

• forming a control electrode on a substrate made of an insulating material;
• forming a control insulating film on the control electrode;
• forming a storage region having at least five dispersed particulate on the control insulating film;
• forming a tunnel insulating film on the storage region;
• forming a conduction region made of a polycrystalline semiconductor on the tunnel insulating film;
• and
• forming a first impurity region adjacent to the conduction region and a second impurity region apart from the first impurity region and adjacent to the conduction region.

A method of manufacturing a memory device, comprising:

• forming a control electrode on a substrate made of an insulating material;
• forming a control insulating film on the control electrode;
• forming a storage region, having a plurality of dispersed particulate, on the control insulating film;
• forming a tunnel insulating film on the storage region;
• forming a conduction region made of a semiconductor on the tunnel insulating film;
• forming a first impurity region adjacent to the conduction region and a second impurity region apart from the first impurity region and adjacent to the conduction region;
• and
• the conduction region being formed by a polysilicon film having a surface roughness in the range of 0.1 nm to 100 nm and wherein a number of particulate in the storage region is larger than a number of crystal grains in the conduction region.