Barium strontium titanate integrated circuit capacitors and process for making the same
AssigneesSymetrix Corporation, Matsushita Electronics Corporation
InventorsMasamichi Azuma, Michael C. Scott, Carlos A. Paz de Araujo, Joseph D. Cuchiaro
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Abstract
Integrated circuit capacitors in which the capacitor dielectric is a thin film of BST having a grain size smaller than 2000 Å. Typical gain sizes are 40 nanometers and less. The BST is formed by deposition of a liquid precursor by a spin-on process. The original liquid precursor includes an alkoxycarboxylate dissolved in 2-methoxyethanol and an xylene exchange is preformed just prior to spinning. The precursor is dried in air at a temperature of about 400° C. and then furnace annealed in oxygen at a temperature of between 675° C. and 850° C.
Claims13
An integrated circuit including a capacitor comprising a pair of electrodes and a layer of barium strontium titanate interposed between said pair of electrodes, said layer of barium strontium titanate having a thickness of less than 1000 nanometers and having an average grain size smaller than 200 nanometers.
Dependencies are inferred from the claim text.