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US 6,285,046 B1Granted
Controllable semiconductor structure with improved switching properties
AssigneeDaimlerChrysler AG
InventorsNando Kaminski, Horst Neubrand
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AssigneeDaimlerChrysler AG
InventorsNando Kaminski, Horst Neubrand
Estimating the term…
The invention concerns a controllable semiconductor structure comprising a base region (101, 201, 301, 401), a source region (106, 212, 312, 412) and a drain region (107, 213, 313, 413) a conductive duct being provided in the base region between the source and drain. According to the invention, the duct can be constricted by regions lying parallel thereto, an active control region (102, 202, 302, 402) and an opposite passive control region (103, 203, 303, 403) which each form a blockable passage with the base region (101, 201, 301, 401). Further provided is a conductive connection (108, 209, 309, 409) between the passive control region (103, 203, 303, 403) and the source region (106, 212, 312, 412), the semiconductor material of the base region (101, 201, 301, 401) having an energy gap of more than 1.2 eV.
A controllable semiconductor structure having a base region, a source region and a drain region, with a conductive channel being provided in the base region between the source and the drain, and wherein the channel can be pinched off by zones parallel thereto, including an active control zone and an oppositely-located, passive control zone, which respectively form a blockable transition to the base region;
The semiconductor structure according to one of claims 1 through 3, wherein the active control zone and the passive control zone are at potentials that are selected independently of one another.
Dependencies are inferred from the claim text.