Plasma processing device and a method of plasma process

A method of setting conditions of a microwave and a magnetic field in a plasma process apparatus in which the microwave and the magnetic field are generated to bring about electron cyclotron resonance, thereby generating a plasma which is applied to an object to be processed,

• the apparatus comprising
• a microwave generator configured to generate the microwave,
• a microwave transmitter configured to transmit the microwave,
• a process chamber configured to have the object placed therein, the microwave being introduced into the process chamber through the microwave transmitter,
• a process gas supply configured to supply a process gas into the process chamber, and
• a magnetic field generator configured to generate a magnetic field within the process chamber,
• the method comprising the steps of:
• establishing as an upper frequency limit a maximum frequency of frequencies at which a standing wave of the microwave does not occur on the surface of the object;
• establishing as a lower frequency limit a cutoff frequency determined by the inner diameter of the process chamber;
• setting a to-be-used frequency of the microwave within a range between the upper and lower frequency limits;
• and
• setting a to-be-used intensity of the magnetic field based on the to-be-used frequency of the microwave to bring about the electron cyclotron resonance.