Method of forming a super-shallow amorphous layer in silicon
AssigneeAdvanced Micro Devices, Inc.
InventorBin Yu
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Abstract
A method of manufacturing an integrated circuit is disclosed herein. The method includes providing an implant in a semiconductor to create an amorphous region; growing a thermal oxide layer on the amorphous region such that the thermal oxide layer consumes a portion of the amorphous region; and removing the thermal oxide layer such that the resulting amorphous region is super-shallow.
Claims20
A method of manufacturing an integrated circuit comprising:
- providing an implant in a semiconductor to create an amorphous region;
- growing a thermal oxide layer on the amorphous region such that the thermal oxide layer consumes a portion of the amorphous region;
- and
- removing the thermal oxide layer such that the resulting amorphous region is thinner than when initially created.
A method of forming a super-shallow amorphous region in a semiconductor structure, the method comprising:
- amorphosizing the semiconductor structure, creating an amorphous region;
- growing an insulative layer on the semiconductor structure such that the insulative layer consumes a portion of the amorphous region;
- and
- removing the insulative layer such that the resulting amorphous region is thinner than when initially created.
A method of manufacturing an ultra-large scale integrated circuit including a plurality of transistors, the method comprising:
- amorphosizing a semiconductor structure, creating an amorphous region;
- forming an oxide structure on the semiconductor structure such that the oxide structure consumes a portion of the amorphous region;
- and
- removing the oxide structure.
Dependencies are inferred from the claim text.