Power transistor with silicided gate and contacts

A method of forming a high current field effect transistor comprising the steps of:

• forming a semiconductor substrate of a first conductivity type having an outer surface;
• forming a polycrystalline semiconductor gate body having an outer surface and separated from said outer surface of said semiconductor substrate by a gate insulator layer;
• forming a conductive drain region of opposite conductivity type in said outer surface of said substrate and spaced apart from said gate body;
• forming a platinum silicide gate contact layer disposed on the outer surface of said gate body;
• and
• forming a platinum silicide drain contact layer disposed on said outer surface of said drain region and spaced apart from said gate body and said platinum silicide gate contact layer;
• wherein the steps of forming a platinum silicide drain contact layer and platinum silicide gate layer comprise the steps of depositing a layer of conformal oxide outwardly from the surface of the substrate and the outer surfaces of the gate conductor body;
• depositing a layer of non-conformal insulative material outwardly from the layer of conformal oxide;
• forming a photoresist mask body disposed between the gate conductor body and the conductive drain region;
• anisotropically etching said insulative material through said mask to expose only the outer surface of the gate conductor layer and the outer surface of the conductive drain region;
• depositing a layer of platinum covering at least the exposed outer surfaces of the gate conductor body and the drain region;
• and
• sintering the platinum layer to form the platinum silicide gate contact layer and the platinum suicide drain contact layer.