Semiconductor device, and manufacturing method therefor
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorKenji Kawai
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Abstract
There is described a method of forming a semiconductor device in which a contact plug penetrates through an interlayer insulating film. The method is capable of formation of a multilayer wiring structure of small resistance. Contact holes are formed in an interlayer oxide film laid on a silicon substrate by etching, through use of a CF-based gas plasma. An organic layer deposited at the bottom of the contact holes is removed through cleaning etching through use of a plasma of a mixed gas consisting of CF4 and O2. After removal of the organic layer, a conductive contact plug is formed in each of the contact holes.
Claims15
A method of manufacturing a semiconductor device having a plurality of contact holes formed in an interlayer oxide film laid on both a silicon substrate and a conductive wiring pattern, the method comprising the steps of:
- etching the interlayer oxide film with a CF based gas plasma to expose portions of the conductive wiring pattern, thereby forming the plurality of contact holes;
- eliminating an organic layer deposited at the bottom of the contact holes with a cleaning gas plasma containing a halogen-based gas selected from the group consisting of CF4, Cl2, CHF3, SF6 and NF3 and an oxygen containing gas selected from the group consisting of O2, N2O, CO2, O3, H2O2 and H2O;
- and
- forming a conductive contact plug in each of the contact holes after removal of the organic layer.
A method for manufacturing a semiconductor device having a plurality of contact holes formed in an interlayer oxide film laid on both a silicon substrate and a conductive wiring pattern the method comprising the steps of:
- etching the interlayer oxide film with a CF-based gas plasma to expose portions of the conductive wiring pattern, thereby forming the plurality of contact holes;
- removing an organic layer deposited at the bottom of the contact holes with a cleaning gas plasma containing Cl2 or Cl2 and NF3;
- and
- forming a conductive contact plug in each of the contact holes after removal of the organic layer.
Dependencies are inferred from the claim text.