Method of forming a cobalt silicide layer by use of a TEOS through oxide film for ion-implantation process

A method of removing laminations of a TEOS oxide film and a silicidation reaction inhibitor layer from a surface of a silicon region for subsequent cobalt silicidation reaction, said method comprising the steps of:

• forming a TEOS oxide film on a surface of the silicon region;
• carrying out an ion-implantation of impurities penetrating the TEOS film;
• carrying out a heat treatment for activation of the ion-implanted impurities;
• and
• carrying out a dry etching to said laminations of said TEOS oxide film and said silicidation reaction inhibitor layer.

A method of forming a cobalt silicide layer on a surface of a silicon region, said method comprising the steps of:

• forming a TEOS oxide film on a surface of the silicon region;
• carrying out an ion-implantation of impurities penetrating the TEOS film;
• carrying out a heat treatment for activation of the ion-implanted impurities;
• and
• carrying out a dry etching to remove laminations of the TEOS oxide film and a silicidation reaction inhibitor layer from a surface of said silicon region;
• and
• forming a cobalt silicide layer on said surface of said silicon region.

A method of forming a cobalt silicide layer on a silicon region, said method comprising the steps of:

• forming a TEOS oxide film on a surface of said silicon region;
• carrying out an ion-implantation process for implanting ions through said TEOS oxide film into said silicon region;
• carrying out a heat treatment to activate said ions implanted in said silicon region, whereby a silicidation reaction inhibitor layer is concurrently formed on an interface between said TEOS oxide film and said surface of said silicon region;
• carrying out a dry etching to remove laminations of said TEOS oxide film and said silicidation reaction inhibitor layer from said surface of said silicon region;
• carrying out a cleaning process for cleaning the surface of said silicon region by subjecting said surface of said silicon region to an acidic solution and subsequently to a diluted hydrofluoric acid solution;
• and
• forming a cobalt silicide layer on said surface of said silicon region.

A method of removing a silicidation reaction inhibitor layer from a surface of a silicon region for subsequent silicidation reaction, said method comprising the steps of:

• forming a TEOS oxide film on a surface of the silicon region;
• carrying out an ion-implantation of impurities penetrating the TEOS film;
• carrying out a heat treatment for activation of the ion-implanted impurities;
• cleaning a surface of an applied oxide layer through use of one of a sulfate-hydrogen peroxide solution and an ammonium-hydrogen peroxide solution;
• following the cleaning step, performing a plasma etch step at a first power using a first gas mixture at a first pressure;
• and
• following the plasma etch step, performing a plasma treatment at a second power higher than the first power using a gas different from the first gas mixture at a second pressure lower than the first pressure.