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US 6,284,656 B1Granted
Copper metallurgy in integrated circuits
AssigneeMicron Technology, Inc.
InventorPaul A. Farrar
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AssigneeMicron Technology, Inc.
InventorPaul A. Farrar
Estimating the term…
A typical integrated circuit interconnects millions of microscopic transistors and resistors with aluminum wires buried in silicon-dioxide insulation. Yet, aluminum wires and silicon-dioxide insulation are less attractive than copper wires and polymer-based insulation, which promise both lower electrical resistance and capacitance and thus faster, more efficient circuits. Unfortunately, current techniques cannot realize the promise because copper reacts with the polymer-based insulation to form copper dioxide within the polymer, reducing effectiveness of the copper-polymer combination. Accordingly, the inventor devised a method which uses a non-acid-precursor to form a polymeric layer and then cures, or bakes, it in a non-oxidizing atmosphere, thereby making the layer resistant to copper-dioxidizing reactions. Afterward, the method applies a copper-adhesion material, such as zirconium, to the layer to promote adhesion with a subsequent copper layer. With reduced copper-dioxide, the resulting interconnective structure facilitates integrated circuits with better speed and efficiency.
A method of making copper-polymer-based interconnections in an integrated circuit, the method comprising:
A method of making copper-polymer-based interconnections in an integrated circuit, the method comprising:
A method of making copper-polymer-based interconnections in an integrated circuit, the method comprising:
A method of making copper-polymer-based interconnections in an integrated circuit, the method comprising:
A method of electrically connecting first and second components in an integrated-circuit assembly, the method comprising:
Dependencies are inferred from the claim text.