Method for producing low carbon/oxygen conductive layers
AssigneeMicron Technology, Inc.
InventorEugene P. Marsh
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Abstract
The present invention provides a method for forming a substantially carbon- and oxygen-free conductive layer, wherein the layer can contain a metal and/or a metalloid material. According to the present invention, a substantially carbon- and oxygen-free conductive layer is formed in an oxidizing atmosphere in the presence of an organometallic catalyst using, for example, a chemical vapor deposition process. Such layers are particularly advantageous for use in memory devices, such as dynamic random access memory (DRAM) devices.
Claims15
A method for use in fabrication of integrated circuits comprising:
- providing a substrate assembly having a surface;
- and
- forming, on a surface, a substantially carbon- and oxygen-free layer comprising a conductive material from a precursor in an oxidizing atmosphere and in the presence of an organometallic catalyst, wherein the precursor comprises at least one of a metal and a metalloid, wherein a metal portion of the organometallic catalyst is different than the metal of the precursor.
A method for forming a substantially carbon- and oxygen-free conductive layer comprising the steps of:
- providing a substrate including a heated surface in a reactor chamber;
- providing an oxidizing atmosphere within the chamber;
- supplying a precursor to the reactor chamber;
- and
- supplying an organometallic catalyst to the reactor chamber, wherein the substantially carbon- and oxygen-free conductive layer forms on the heated surface.
Dependencies are inferred from the claim text.