Method for forming a contact having a diffusion barrier

A method of forming a contact structure to provide electrical communication to a semiconductor device on an in-process integrated circuit substrate, the method comprising:

• forming a contact opening through an oxide layer above the semiconductor device;
• forming, in an atmosphere devoid of fluorine, a layer of refractory metal in the bottom of the contact opening, the layer of refractory metal having a thickness in a range of about 200 Angstroms to about 300 Angstroms;
• forming a layer of electrically conductive silicon-containing material on the layer of refractory metal, the layer of electrically conductive silicon-containing material having a thickness in a range of about 6000 to about 7000 Angstroms, the layer of electrically conductive silicon-containing material being doped in a concentration range of about 1×1020 to about 5×1020 dopant atoms per cubic centimeter of electrically conductive silicon-containing material;
• and
• annealing the in-process integrated circuit substrate with a rapid thermal anneal in a rapid thermal processing chamber at a temperature in the range from about 800° C. to about 950° C.

A method of forming a contact structure to provide electrical communication to a semiconductor device on an in-process integrated circuit substrate, the method comprising:

• forming a contact opening through an insulating layer above the semiconductor device, wherein the contact has a bottom and defines a sidewall in the insulating layer, the insulating layer comprising oxide;
• forming, in an atmosphere devoid of fluorine, a layer of refractory metal in the bottom of the contact opening;
• forming a layer of electrically conductive silicon-containing material on the layer of refractory metal in the contact opening, the layer of electrically conductive silicon-containing material being doped, and wherein the layer of electrically conductive silicon-containing material adheres to the oxide of the sidewall in the insulating layer and is formed from a disilane precursor in an atmosphere of B2H6 at a temperature in a range of about 550° C. to about 570° C.;
• and
• annealing the in-process integrated circuit substrate.

A contact structure formation method comprising:

• forming an insulator upon a silicon substrate;
• forming a contact hole extending through the insulator to the silicon substrate;
• forming, in an atmosphere devoid of fluorine, a refractory metal on the silicon substrate to partially fill the contact hole;
• filling up the contact hole with a silicon-containing material that:
• is made electrically conductive by a dopant;
• and
• is upon the refractory metal within the contact hole;
• forming by heat:
• a refractory metal silicide within the silicon substrate that is both below and aligned with the contact hole;
• and
• a compound within the contact hole including both the refractory metal and the dopant.

A contact structure formation method comprising:

• forming an insulator upon a silicon substrate;
• forming a contact hole extending through the insulator to the silicon substrate;
• forming in an atmosphere devoid of fluorine:
• a refractory metal silicide within the silicon substrate and both below and aligned with the contact hole;
• a silicon-containing material made electrically conductive by a dopant and situated within the contact hole;
• and
• a compound of both the refractory metal and the dopant situated within the contact hole between the refractory metal silicide and the silicon-containing material.

A method of forming a contact structure to provide electrical communication to a semiconductor device on an in-process integrated circuit substrate, the method comprising:

• forming a contact opening through an insulating layer above the semiconductor device, wherein the contact opening has a bottom and defines a sidewall in the insulating layer, the insulating layer comprising oxide;
• forming, in an atmosphere devoid of flooring, a layer of refractory metal in the bottom of the contact opening;
• forming a layer of electrically conductive silicon-containing material on the layer of refractory metal in the contact opening, the layer of electrically conductive silicon-containing material being doped, and wherein the layer of electrically conductive silicon-containing material adheres to the oxide of the sidewall in the insulating layer and is formed from a silane precursor in an atmosphere of B2H6 at a temperature in a range of about 630° C. to about 650° C.;
• and
• annealing the in-process integrated circuit substrate.