Methods of forming smooth conductive layers for integrated circuit devices
AssigneeSamsung Electronics Co., Ltd.
InventorHyeun-Seog Leem
Life of this patent
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Abstract
A method for forming a metal layer for an integrated circuit device includes forming a first conductive layer on an integrated circuit substrate. While forming the first conductive layer, a reflection index of the first conductive layer is monitored, and the formation of the first conductive layer is terminated when the reflection index of the first conductive layer reaches a predetermined value. More particularly, the first conductive layer can be an aluminum layer having a thickness in the range of approximately 500 Angstroms to 1500 Angstroms.
Claims28
A method for forming a metal layer for an integrated circuit device, the method comprising the steps of:
- forming a first conductive layer on an integrated circuit substrate wherein the first conductive layer comprises aluminum;
- while forming the first conductive layer, monitoring a reflection index of the first conductive layer comprising aluminum;
- and
- terminating forming the first conductive layer comprising aluminum when the reflection index of the first conductive layer reaches a predetermined value.
A method for forming a metal layer for an integrated circuit device, the method comprising the steps of:
- forming a first conductive layer on an integrated circuit substrate;
- while forming the first conductive layer, monitoring a reflection index of the first conductive layer;
- terminating forming the first conductive layer when the reflection index of the first conductive layer reaches a predetermined value;
- forming a buffer layer on the first conductive layer opposite the substrate after terminating forming the first conductive layer wherein the buffer layer comprises a material different than that of the first conductive layer, wherein the buffer layer has a thickness less than a thickness of the first conductive layer;
- after forming the buffer layer, forming a second conductive layer on the buffer layer opposite the substrate;
- while forming the second conductive layer, monitoring a reflection index of the second conductive layer;
- and
- terminating forming the second conductive layer when the reflection index of the second conductive layer reaches a second predetermined value.
A method for forming a metal layer for an integrated circuit device, the method comprising the steps of:
- forming a first conductive layer on an integrated circuit substrate;
- while forming the first conductive layer, monitoring a reflection index of the first conductive layer;
- terminating forming the first conductive layer when the reflection index of the first conductive layer reaches a predetermined value;
- forming a buffer layer on the first conductive layer opposite the substrate after terminating forming the first conductive layer wherein the buffer layer comprises a material different than that of the first conductive layer, wherein the buffer layer has a thickness of no more than approximately 100 Angstroms;
- after forming the buffer layer, forming a second conductive layer on the buffer layer opposite the substrate;
- while forming the second conductive layer, monitoring a reflection index of the second conductive layer;
- and
- terminating forming the second conductive layer when the reflection index of the second conductive layer reaches a second predetermined value.
A method of forming a conductive layer on an integrated circuit substrate, the method comprising the steps of:
- forming a first aluminum layer on the integrated circuit substrate wherein the step of forming the first aluminum layer comprises,
- monitoring a reflection index of the first aluminum layer while forming the first aluminum layer, and
- terminating forming the first aluminum layer when the reflection index of the first aluminum layer reaches a predetermined value;
- forming a conductive buffer layer on the first aluminum layer opposite the substrate wherein the conductive buffer layer comprises a material other than aluminum;
- and
- forming a second aluminum layer on the conductive buffer layer opposite integrated circuit substrate and the first aluminum layer.
A method of forming a conductive layer on an integrated circuit substrate, the method comprising the steps of:
- forming a first aluminum layer on the integrated circuit substrate;
- forming a conductive buffer layer on the first aluminum layer opposite the substrate wherein the conductive buffer layer comprises a material other than aluminum wherein the conductive buffer layer has a thickness of not more than approximately 100 Angstroms, and
- forming a second aluminum layer on the conductive buffer layer opposite integrated circuit substrate and the first aluminum layer.
A method of forming a conductive layer on an integrated circuit substrate, the method comprising the steps of:
- forming a first aluminum layer on the integrated circuit substrate;
- forming a conductive buffer layer on the first aluminum layer opposite the substrate wherein the conductive buffer layer comprises a material other than aluminum wherein the conductive buffer layer has a thickness less than a thickness of the first aluminum layer;
- and
- forming a second aluminum layer on the conductive buffer layer opposite integrated circuit substrate and the first aluminum layer.
Dependencies are inferred from the claim text.