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AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMasahiro Ono, Tsukasa Shiraishi, Yoshihiro Bessho, Kazuo Eda
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A manufacturing method for a semiconductor device using a wire bonding method using a metal wire. In the wire bonding method, an impact load applied when a metal ball formed at the tip of the metal wire by electric discharge is brought into contact with a terminal electrode of a semiconductor device is smaller than a static load applied after the metal ball is brought into contact with the terminal electrode. The method makes it possible to prevent an element or wiring from being damaged while securing the pressure necessary for bonding the metal ball to the terminal electrode even when the terminal electrode is placed on the element or the wiring.
A manufacturing method for a semiconductor device using a wire bonding method using a metal wire, wherein in said wire bonding method, an impact load applied when a metal ball formed at the tip of said metal wire by electric discharge is brought into contact with a terminal electrode of a semiconductor device is smaller than a static load applied after said metal ball is brought into contact with said terminal electrode.
A method for mounting a semiconductor device, comprising mounting a circuit board provided with a bump on an input/output terminal electrode to a semiconductor device by bonding the tip of said bump to said terminal electrode of said semiconductor device, wherein an impact load applied when said bump is brought into contact with said semiconductor device is smaller than a static load applied after said bump is brought into contact with said terminal electrode.
A method for inspecting a semiconductor device used for a method for manufacturing a semiconductor device by a wire bonding method using metal wire, wherein a probe needle for inspection is brought into contact with a region on said terminal electrode other than a region in which the metal ball formed at the tip of said metal wire by electric discharge is bonded to said terminal electrode among regions on the terminal electrode of the semiconductor device.
Dependencies are inferred from the claim text.