Method for forming a structured metallization on a semiconductor wafer

A method of forming a structured metallization on a semiconductor wafer, a main surface of said wafer having a passivation layer applied thereto, which is structured so as to determine at least one bond pad, said method comprising the following steps:

• a2) producing an activated dielectric on areas of the passivation layer on which the structured metallization is to be formed, and activating the at least one bond pad;
• b2) selectively chemically depositing metal directly on both the activated areas and the activated bond pad in a common process step in such a way that the structured metallization formed on the activated dielectric and the metal chemically deposited on the activated bond pad are electroconductively joined.

A method of forming a structured metallization on a semiconductor wafer, a main surface of said wafer having a passivation layer applied thereto, which is structured so as to determine at least one bond pad, said method comprising the following steps:

• a2) producing an activated dielectric on areas of said passivation layer on which said structured metallization is to be formed, and activating said at least one bond pad, wherein said dielectric is first fully applied over said areas and then structured by means of photolithographic processes, said dielectric containing palladium particles;
• and
• b2) chemically depositing metal directly on said activated areas and the activated bond pad in such a way that said structured metallization formed on said activated dielectric and said metal chemically deposited on said metal bump are electroconductively joined.