Method for forming metal line in semiconductor device
AssigneeHyundai Electronics Industries Co., Ltd.
InventorKyun Sa Rha
Life of this patent
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Abstract
Method for forming a metal line in a semiconductor device, which can effectively suppress abnormal oxidation in formation of metal line of tungsten or tungsten silicide, including the steps of (1) forming an insulating material layer on a semiconductor substrate, and forming a conduction line on the insulating material layer, (2) nitriding an exposed surface of the conduction line, and (3) oxidizing the semiconductor substrate including the conduction line having a nitride layer formed on the exposed surface thereof.
Claims18
A method for forming a metal line in a semiconductor device, comprising:
- forming an insulating material layer on a semiconductor substrate and;
- forming a conduction line on the insulating material layer;
- forming a nitride layer on only a portion of at least one exposed surface of the conduction line by nitriding the at least one exposed surface;
- and,
- oxidizing the semiconductor substrate including the conduction line having the nitride layer formed on the portion of at least one exposed surface.
A method for forming a metal line in a semiconductor device, comprising:
- forming a gate oxide film on a semiconductor substrate;
- forming a polysilicon layer on the gate oxide film;
- forming a tungsten layer on the polysilicon layer;
- forming a cap gate layer on the tungsten layer;
- forming a patterned gate line by selectively patterning a stack of the cap gate layer, the tungsten layer, the polysilicon layer and the gate oxide film;
- nitriding the patterned gate line to form tungsten nitride layers at sides of the tungsten layer of the patterned gate line;
- and
- oxidizing the semiconductor device including the patterned gate line using the tungsten nitride layers as oxidation prevention films.
Dependencies are inferred from the claim text.