Method and device for controlled cleaving process
AssigneeSilicon Genesis Corporation
InventorsFrancois J. Henley, Nathan W. Cheung
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Abstract
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
Claims17
A process for forming a film of material from substrates, the process comprising:
- forming a cleave region at a selected depth underneath a surface of a substrate, said cleave region at said selected depth to define a substrate material to be removed above said selected depth, said cleave region comprising a deposited layer;
- diffusing a plurality of particles into a vicinity of said deposited layer to increase stress in said deposited layer;
- and
- initiating a controlled cleaving action at a vicinity of said cleave region in said substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said material to be removed from said substrate.
Dependencies are inferred from the claim text.