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US 6,284,618 B1Granted
Method of making a semiconductor device having a conductor pattern side face provided with a separate conductive sidewall
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorKazuo Tomita
Life of this patent
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Abstract
It is possible to obtain a semiconductor device in which a contact and a wiring provided on the contact can be electrically connected well even if a shift of superposition is caused. Sidewalls 5a, 5b, 5c and 5d formed of a conductive material are bonded to side faces of wirings 4a and 4b to be provided on contacts 3a and 3b. Consequently, the wirings 4a and 4b and the contacts 3a and 3b can be electrically connected well through the sidewalls 5a, 5b, 5c and 5d.
Claims2
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a contact hole on an insulation film provided on a substrate from a top face of said insulation film to a bottom face thereof;
- providing a conductive material on said insulation film and filling an inside of said contact hole with said conductive material to obtain a contact;
- forming a resist pattern above said contact by performing a photolithographic step on said conductive material;
- selectively performing anisotropic etching for said conductive material by using said resist pattern as an etching mask to obtain a conductor pattern, thereby removing said resist pattern;
- forming a conductive film along an exposed surface of said conductor pattern and that of said insulation film including said contact;
- and
- performing anisotropic etching for said conductive film by using said surface of said insulation film as an etching stopper to leave a conductive sidewall bonded to a side face of said conductor pattern, said conductive sidewall extending no higher than a top face of the conductor pattern,
- wherein said contact and said conductor pattern are electrically connected through said conductive sidewall provided like a frame on said side face of said conductor pattern when at least a part of a top face of said contact and said conductor pattern are not superposed.
5 more elements
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a contact hole on an insulation film provided on a substrate from a top face of said insulation film to a bottom face thereof;
- providing a conductive material on said insulation film and filling an inside of said contact hole with said conductive material to obtain a contact;
- forming a mask layer on said conductive material;
- forming a resist pattern above said contact by performing a photolithographic step on said mask layer;
- selectively performing anisotropic etching for said mask layer and said conductive material by using said resist pattern as an etching mask to obtain a mask and a conductor pattern, thereby removing said resist pattern;
- forming a conductive film along exposed surfaces of said mask and said conductor pattern and a surface of said insulation film including a surface of said contact;
- performing anisotropic etching for said conductive film by using said surface of said insulation film as an etching stopper to leave a conductive sidewall bonded to side surfaces of said mask and said conductor pattern, thereby obtaining a cylindrical storage node including said conductor pattern and said conductive sidewall;
- forming a dielectric film on a surface of said cylindrical storage node;
- and
- forming a conductive layer acting as a cell plate on a surface of said dielectric film,
- wherein said contact and said conductor pattern are electrically connected through said conductive sidewall provided like a frame on said side face of said conductor pattern when at least a part of a top face of said contact and said conductor pattern are not superposed.
8 more elements
Dependencies are inferred from the claim text.