Method for salicide process using a titanium nitride barrier layer

A method for forming self-aligned silicide using a titanium nitride barrier layer, comprising the steps of:

• a. providing a substrate structure, having a gate structure thereon with sidewalls, source and drain regions adjacent to said gate structure, and dielectric spacers on said sidewalls of said gate structure;
• said gate structure comprising a gate dielelctric layer with a gate electrode layer thereover;
• b. depositing a titanium layer having a thickness of between about 275 Angstroms and 300 Angstroms over said gate structure and said substrate structure;
• c. implanting mixing ions into said substrate structure;
• thereby forming a mixing ion concentration profile peaking at the interface of said titanium layer and said substrate structure and extending upward into said titanium layer a distance of about 200 Angstroms and extending downward into said substrate structure a distance of about 200 Angstrams;
• d. depositing a titanium nitride barrier layer having a thickness of between 200 Angstroms and 300 Angstroms over said gate structure and said substrate structure;
• e. performing a first rapid thermal anneal on said substrate structure;
• f. performing a selective etch on said substrate structure to remove said titanium nitride barrier layer and unreacted titanium from said titanium layer;
• and
• g. performing a second rapid thermal anneal on said substrate structure.

A method for forming self-aligned silicide using a titanium nitride barrier layer, comprising the steps of:

• a. providing a substrate structure, having a gate structure thereon with sidewalls, source and drain regions adjacent to said gate structure, and dielectric spacers on said sidewalls of said gate structure;
• said gate structure comprising a gate dielelctric layer with a gate electrode layer thereover;
• b. depositing a titanium layer having a thickness of between about 275 Angstroms and 300 Angstroms over said gate structure and said substrate structure using a sputtering process;
• c. implanting Ge or Si mixing ions into said substrate structure;
• thereby forming a mixing ion concentration profile peaking at the interface of said titanium layer and said substrate structure and extending upward into said titanium layer a distance of about 200 Angstroms and extending downward into said substrate structure a distance of about 200 Angstrams;
• d. depositing a titanium nitride barrier layer having a thickness of between 200 Angstroms and 300 Angstroms over said gate structure and said substrate structure using a sputtering process;
• e. performing a first rapid thermal anneal on said substrate structure at a temperature of between about 720° C. and 730° C. for a time of between about 30 seconds and 50 seconds in a nitrogen containing atmosphere;
• f. performing a selective etch on said substrate structure to remove said titanium nitride barrier layer and unreacted titanium from said titanium layer;
• and
• g. performing a second rapid thermal anneal on said substrate structure at a temperature of between about 800° C. and 900° C. for a time of between about 30 seconds and 50 seconds in a nitrogen containing atmosphere.