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US 6,284,599 B1Granted
Method to fabricate a semiconductor resistor in embedded flash memory application
AssigneeTexas Instruments Incorporated
InventorsFreidoon Mehrad, George R. Misium, John H. MacPeak
Life of this patent
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Abstract
A method for fabricating a semiconductor resistor in embedded FLASH memory applications is described. In the method a gate stack (54) is formed on an insulating region (70) of a semiconductor substrate. The control gate (20) is removed from the gate stack (54) and electric contacts (125), (130) are formed to contact the floating gate (16) to form the resistor.
Claims11
A method of fabricating a semiconductor resistor comprising:
- providing a FLASH memory cell gate stack on an insulating region of a semiconductor substrate, said gate stack comprising, a floating gate, an interpoly dielectric layer on said floating gate, and a control gate film on said interpoly dielectric layer;
- removing said control gate film from over said interpoly dielectric leaving a region of said control gate film only along the perimeter of said interpoly dielectric;
- and
- forming electrical contacts to said floating gate to form a resistor.
1 more element
A method of fabricating a semiconductor resistor in embedded FLASH memory applications comprising:
- providing a FLASH memory cell gate stack on an insulating region of a semiconductor substrate containing at least one MOS transistor region, said FLASH memory cell gate stack comprising, a floating gate, an interpoly dielectric layer on said floating gate, and a control gate film on said interpoly dielectric layer and said MOS transistor region;
- simultaneously forming a gate electrode on said MOS transistor by etching control gate film and removing said control gate film from over said interpoly dielectric layer leaving a region of said control gate film only along the perimeter of said interpoly dielectric;
- and
- forming electrical contacts to said floating gate to form a resistor.
1 more element
Dependencies are inferred from the claim text.