Fabricating method for semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorsSatoshi Yamauchi, Shinobu Takehiro, Masaki Yoshimaru
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Abstract
In the fabrication of capacitors, a TiO2 film is formed from a TiN film by means of heat-treatment within an atmosphere which does not contain oxygen. This serves to prevent the polysilicon which forms the bottom electrode from being oxidized during heat-treatment. Thus, once the bottom electrode has been formed on the silicon wafer, a TiN film and RuO2 film are formed, and the silicon wafer is heat-treated in an atmosphere which does not contain oxygen. In this manner, a dielectric film that is a TiO2 film and a top electrode that is a ruthenium film are obtained.
Claims27
A fabrication method for a semiconductor device, comprising:
- forming a laminated structure, having at least a first film for use in forming an oxidized dielectric film and which contains an oxidizable substance for the purpose of forming an oxidized dielectric film, and having a second film for use in supplying oxygen to the first film, and
- supplying oxygen from the second film to the first film by virtue of heat-treatment of the laminated structure within an atmosphere which does not contain oxygen.
A method of fabricating a semiconductor device, comprising:
- forming a first electrode on a semiconductor substrate;
- forming a first film which includes an oxidizable substance, on the first electrode;
- forming a second film which includes oxygen, on the first film;
- and
- supplying oxygen from the second film to the first film by heating in an inert gas.
A method of fabricating a semiconductor device, comprising;
- forming a laminated structure which includes a first film, and a second film comprising oxygen;
- and
- supplying the oxygen from the second film to the first film by heating within an inert gas.
A method of fabricating a semiconductor device, comprising;
- forming a laminate structure which includes a first film on a semiconductor substrate and a second film, the first film includes an oxidizable substructure, and the second film includes oxygen;
- and
- supplying the oxygen from the second film to the first film by heating within an inert gas.
Dependencies are inferred from the claim text.